MCAC88N12A
Features
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•
•
•
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Split Gate Trench MOSFET Technology
Excellent Package for Heat Dissipation
High Density Cell Design for Low RDS(ON)
Halogen Free. “Green” Device (Note 1)
N-CHANNEL
Epoxy Meets UL 94 V-0 Flammability Rating
MOSFET
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
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Moisture Sensitivity Level 1
Maximum Ratings
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Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance: 20°C/W Junction to Ambient(t≤10S)(2)
Thermal Resistance: 50°C/W Junction to Ambient(Steady-State)(2)
DFN5060
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Thermal Resistance: 1.04°C/W Junction to Case(Steady-State)
Parameter
Rating
120
±20
88
Symbol
VDS
VGS
ID
Unit
V
D
H
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current
B
A
N
V
•
PIN 1
G
C
A
J
Pulsed Drain Current(3)
Total Power Dissipation
IDM
352
120
400
A
E
PD
W
mJ
F
Single Pulsed Avalanche Energy(4)
EAS
K
Note:
M
L
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on
RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
DIMENSIONS
MM
MIN MAX MIN MAX
3. Repetitive rating; pulse width limited by max. junction temperature.
INCHES
DIM
NOTE
4. TJ=25℃, VDD=50V, RG=25Ω, L=2mH.
A
B
C
D
E
F
G
H
K
J
0.031 0.047 0.80 1.20
0.010
0.254
TYP.
Internal Structure and Marking Code
0.193 0.222 4.90 5.64
0.232 0.250 5.90 6.35
0.148 0.167 3.75 4.25
0.126 0.154 3.20 3.92
0.189 0.213 4.80 5.40
0.222 0.239 5.65 6.06
0.045 0.059 1.15 1.50
0.012 0.020 0.30 0.50
0.046 0.054 1.17 1.37
0.012 0.028 0.30 0.71
0.016 0.028 0.40 0.71
8
7
6
5
D
D
D
D
8
7
6
5
MCC
MCAC88N12A
L
M
N
1
2
3
4
S
S
S
G
1
2
3
4
Rev.3-3-07072022
1/5
MCCSEMI.COM