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MCACD40NP03 PDF预览

MCACD40NP03

更新时间: 2024-04-09 19:02:52
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
10页 630K
描述
Tape&Reel:5Kpcs/Reel;

MCACD40NP03 数据手册

 浏览型号MCACD40NP03的Datasheet PDF文件第2页浏览型号MCACD40NP03的Datasheet PDF文件第3页浏览型号MCACD40NP03的Datasheet PDF文件第4页浏览型号MCACD40NP03的Datasheet PDF文件第5页浏览型号MCACD40NP03的Datasheet PDF文件第6页浏览型号MCACD40NP03的Datasheet PDF文件第7页 
MCACD40NP03  
Features  
Trench Power LV MOSFET Technology  
Excellent Package For Heat Disspation  
Moisture Sensitivity Level 1  
(Note1)  
Halogen Free. “Green” Device  
Dual  
Epoxy Meets UL 94 V-0 Flammability Rating  
N&P-CHANNEL  
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
MOSFET  
Maximum Ratings  
Operating Junction Temperature Range : -55°C to +150°C  
Storage Temperature Range: -55°C to +150°C  
Thermal Resistance: 50°C/W Junction to Ambient(Note2)  
NMOS:Thermal Resistance: 2.5°C/W Junction to Case  
PMOS:Thermal Resistance: 2.3°C/W Junction to Case  
PDFN5060-8D  
Parameter  
Rating  
Symbol  
Unit  
N-Channel MOSFET  
Drain-Source Voltage  
Gate-Source Volltage  
VDS  
VGS  
30  
±20  
40  
V
V
TC=25°C  
ID  
Continuous Drain Current  
A
TC=100°C  
25  
Pulsed Drain Current(Note 3)  
Total Power Dissipation(Note4)  
IDM  
PD  
160  
50  
A
W
Single Pulsed Avalanche Energy(Note5)  
mJ  
EAS  
56  
P-Channel MOSFET  
Drain-Source Voltage  
VDS  
VGS  
-30  
±25  
-40  
-25  
V
V
Gate-Source Volltage  
e
TC=25°C  
Continuous Drain Current  
TC=100°C  
ID  
A
A1  
A
Pulsed Drain Current(Note 3)  
Total Power Dissipation(Note4)  
IDM  
PD  
A
W
-160  
54  
A2  
Single Pulsed Avalanche Energy(Note5)  
EAS  
mJ  
90  
DIMENSIONS  
INCHES  
MIN  
MM  
Note:  
DIM  
NOTE  
MAX  
0.218  
0.213  
0.250  
0.238  
0.047  
MIN  
5.15  
5.00  
5.95  
5.66  
1.00  
MAX  
5.55  
5.40  
6.35  
6.06  
1.20  
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,  
0.203  
0.197  
0.234  
0.223  
0.039  
D
D2  
E
E2  
A
A1  
A2  
D1  
E1  
L1  
L2  
b
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.  
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.  
Copper, in a still air environment with TA =25°C.  
2.  
3. Repetitive rating; pulse width limited by max. junction temperature.  
P
D is based on max. junction temperature, using junction-case thermal resistance.  
4.  
5.  
0.010  
0.254  
0.00  
BSC  
NMOS:TJ=25, VDD=25V, VGS=10V, L=0.5mH.  
PMOS:7- ꢀꢁꢂꢃ9'' -259ꢂꢃ9*6 -109ꢂꢃ/ 0.5P+.  
0.000  
0.059  
0.139  
0.022  
0.004  
0.075  
0.154  
0.030  
0.10  
1.90  
3.92  
0.76  
1.50  
3.52  
0.56  
Internal Structure and Marking Code  
8
7
6
5
0.019  
0.50  
BSC  
BSC  
D1  
D1  
D2  
D2  
8
7
6
5
0.012  
0.020  
0.31  
0.51  
e
0.050  
1.27  
MCC  
MCACD40NP03  
1
2
3
4
S1  
G1  
S2  
G2  
1
2
3
4
Rev.4-1-08312023  
1/10  
MCCSEMI.COM  

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