MCACL1D6N06YL
Features
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•
•
•
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Split Gate Trench MOSFET Technology
Low Thermal Resistance
Moisture Sensitivity Level 1
Halogen Free. “Green” Device (Note 1)
N-CHANNEL
Epoxy Meets UL 94 V-0 Flammability Rating
MOSFET
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
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Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance: 55°C/W Junction to Ambient(Note 2)
Thermal Resistance: 0.6°C/W Junction to Case
DFN5060-C
Parameter
Rating
60
Symbol
VDS
Unit
V
D
D2
A
A1
Drain-Source Voltage
Gate-Source Volltage
VGS
±20
230
145
920
208
576
V
TC=25°C
ID
A
Continuous Drain Current
TC=100°C
EE2
Pulsed Drain Current(Note 3)
Total Power Dissipation(Note 4)
IDM
PD
A
W
Single Pulsed Avalanche Energy(Note 5)
A2
EAS
mJ
Note:
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
D1
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based
on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user's specific board design.
b
3. Repetitive rating; pulse width limited by max. junction temperature.
4. PD is based on max. junction temperature, using junction-case thermal resistance.
5. TJ=25℃, VDD=30V, VG=10V, RG=25Ω, L=0.5mH.
e
DIMENSIONS
INCHES
MIN
MM
DIM
NOTE
MAX
0.218
0.209
0.242
0.222
0.041
MIN
5.15
5.10
5.95
5.45
0.85
MAX
5.55
5.30
6.15
5.65
1.05
Internal Structure and Marking Code
D
D2
E
E2
A
A1
A2
D1
E1
L1
L2
b
0.203
0.201
0.234
0.215
0.033
8
7
6
5
D
D
D
D
8
7
6
5
0.008
0.203
BSC
0.000
0.167
0.139
0.018
0.004
0.175
0.147
0.026
0.00
4.25
3.52
0.45
0.10
4.45
3.73
0.65
MCC
L1D6N06YL
0.027
0.68
1.27
BSC
BSC
0.012
0.020
0.30
0.50
e
0.050
1
2
3
4
S
S
S
G
1
2
3
4
Rev.4-1-11152023
1/6
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