MCACD12NP10Y
Features
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Split Gate Trench MOSFET Technology
High Speed Switching
Moisture Sensitivity Level 3
Dual
High Density Cell Design for Low RDS(ON)
Halogen Free. “Green” Device (Note 1)
Epoxy Meets UL 94 V-0 Flammability Rating
N&P-CHANNEL
MOSFET
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
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Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance: 80°C/W Junction to Ambient
Thermal Resistance: 3°C/W Junction to Case
DFN5060-8D
D
Parameter
Rating
Symbol
Unit
N-Channel MOSFET
Drain-Source Voltage
Gate-Source Volltage
VDS
VGS
100
±20
25
V
V
E
TC=25°C
ID
Continuous Drain Current
Pulsed Drain Current(Note 2)
A
15
TC=100°C
IDM
80
A
L2
Single Pulsed Avalanche Energy(Note3)
mJ
64
EAS
D1
E1
P-Channel MOSFET
Drain-Source Voltage
VDS
VGS
-100
±20
-12
V
V
Gate-Source Volltage
L1
e
b
TC=25°C
Continuous Drain Current
TC=100°C
ID
A
-7
A1
A
Pulsed Drain Current(Note 2)
IDM
-40
A
A2
Single Pulsed Avalanche Energy(Note3)
EAS
72
mJ
DIMENSIONS
INCHES MM
MIN MAX
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
DIM
NOTE
BSC
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
MIN
MAX
5.10
6.10
0.90
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
3. NMOS: TJ=25℃, VDD=50V, VG=10V, RG=25Ω, L=0.5mH, IAS=16A.
PMOS: TJ=25℃, VDD=-50V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-17A.
D
E
A
A1
A2
D1
E1
L1
L2
b
0.193 0.201 4.90
0.232 0.240 5.90
0.028 0.035 0.70
0.008
0.20
Internal Structure and Marking Code
0.000 0.004 0.00
0.063 0.071 1.60
0.144 0.152 3.65
0.018 0.026 0.45
0.031
0.012 0.020 0.30
0.10
1.80
3.85
0.65
8
7
6
5
D1
D1
D2
D2
8
7
6
5
0.80
0.50
1.27
BSC
BSC
MCC
MCACD
0.050
e
12NP10Y
1
2
3
4
S1
G1
S2
G2
1
2
3
4
Rev.3-1-05062022
1/8
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