MCAC88N04YHE3
Features
•
•
•
•
•
•
•
AEC-Q101 Qualified
Split Gate Trench MOSFET Technology
High Density Cell Design for Low RDS(on)
Moisture Sensitivity Level 1
N-CHANNEL
Halogen Free. “Green” Device (Note 1)
MOSFET
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
DFN5060
•
•
Operating Junction Temperature Range : -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
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•
Thermal Resistance: 50°C/W Junction to Ambient(Note 2)
Thermal Resistance: 2.2°C/W Junction to Case
D
H
B
Parameter
Rating
40
Symbol
VDS
Unit
V
A
N
Drain-Source Voltage
Gate-Source Volltage
•
PIN 1
G
C
VGS
±20
88
V
J
TC=25°C
ID
A
Continuous Drain Current
E
62
TC=100°C
F
Pulsed Drain Current(Note3)
IDM
PD
352
68
A
W
K
Total Power Dissipation (Note 4)
Single Pulse Avalanche Energy (Note 5)
M
L
EAS
56
mJ
Note:
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
DIMENSIONS
MM
MIN MAX MIN MAX
0.031 0.047 0.80 1.20
INCHES
DIM
NOTE
TYP.
3. Repetitive rating; pulse width limited by max. junction temperature.
4. PD is based on max. junction temperature, using junction-case thermal resistance.
A
B
C
D
E
F
G
H
K
J
5. TJ=25ǔ, VDD=30V, VGS=10V, Rg=25Ω,L =0.5mH.
0.010
0.254
0.193 0.222 4.90 5.64
0.232 0.250 5.90 6.35
0.148 0.167 3.75 4.25
0.126 0.154 3.20 3.92
0.189 0.213 4.80 5.40
0.222 0.239 5.65 6.06
0.045 0.059 1.15 1.50
0.012 0.020 0.30 0.50
0.046 0.054 1.17 1.37
0.012 0.028 0.30 0.71
0.016 0.028 0.40 0.71
Internal Structure and Marking Code
8
7
6
5
D
D
D
D
8
7
6
5
L
M
N
MCC
MCAC88N04Y
4 codes in total
YY is the year
WW is the week
YYWW
1
2
3
4
S
S
S
G
1
2
3
4
Rev.4-1-01052024
1/6
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