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Features
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•
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Split Gate Trench MOSFET Technology
Excellent Package for Heat Dissipation
High Density Cell Design for Low RDS(ON)
Moisture Sensitivity Level 1
1ꢀ&+$11(/
Halogen Free. “Green” Device (Note 1)
Epoxy Meets UL 94 V-0 Flammability Rating
026)(7
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
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Operating Junction Temperature Range : -55°C to +150°C
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Storage Temperature Range: -55°C to +150°C
DFN5060
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Thermal Resistance: 40.7°C/W Junction to Ambient(Note 2)
Thermal Resistance: 0.82°C/W Junction to Case
Parameter
Rating
80
Symbol
VDS
Unit
V
Drain-Source Voltage
Gate-Source Volltage
D
H
B
VGS
±20
100
63
V
A
N
•
TC=25°C
PIN 1
ID
A
G
C
Continuous Drain Current
Pulsed Drain Current(Note3)
Total Power Dissipation(Note4)
J
TC=100°C
IDM
PD
A
W
400
152
600
E
F
Single Pulsed Avalanche Energy(Note5)
EAS
mJ
K
M
Note:
L
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based
on RθJA tʇꢀ10s and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user's specific board design.
DIMENSIONS
MM
MIN MAX MIN MAX
0.031 0.047 0.80 1.20
INCHES
DIM
NOTE
TYP.
3. Repetitive rating; pulse width limited by max. junction temperature.
4. PD is based on max. junction temperature, using junction-case thermal resistance.
A
B
C
D
E
F
G
H
K
J
0.010
0.254
5. TJ=25ǔ, VDD=50V, VGS=10V, L=3mH, IAS=20A.
0.193 0.222 4.90 5.64
0.232 0.250 5.90 6.35
0.148 0.167 3.75 4.25
0.126 0.154 3.20 3.92
0.189 0.213 4.80 5.40
0.222 0.239 5.65 6.06
0.045 0.059 1.15 1.50
0.012 0.020 0.30 0.50
0.046 0.054 1.17 1.37
0.012 0.028 0.30 0.71
0.016 0.028 0.40 0.71
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MCC
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Rev.4-1-11182023
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