MCAC130N04YHE3
Features
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•
•
•
•
•
•
AEC-Q101 Qualified
Split Gate Trench MOSFET Technology
High Density Cell Design for Low RDS(on)
Moisture Sensitivity Level 3
N-CHANNEL
Halogen Free. “Green” Device (Note 1)
MOSFET
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
DFN5060
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•
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•
Operating Junction Temperature Range : -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
Thermal Resistance: 50°C/W Junction to Ambient(Note 2)
Thermal Resistance: 1°C/W Junction to Case
D
H
B
Parameter
Rating
40
Symbol
VDS
Unit
V
A
N
Drain-Source Voltage
Gate-Source Volltage
•
PIN 1
G
C
VGS
±20
130
92
V
J
TC=25°C
ID
A
Continuous Drain Current
E
TC=100°C
F
Pulsed Drain Current(Note3)
IDM
PD
520
150
661
A
K
Total Power Dissipation (Note 4)
W
M
L
Single Pulse Avalanche Energy (Note 5)
EAS
mJ
1RWHꢀ
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DIMENSIONS
MM
MIN MAX MIN MAX
0.031 0.047 0.80 1.20
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INCHES
DIM
NOTE
TYP.
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A
B
C
D
E
F
G
H
K
J
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0.010
0.254
0.193 0.222 4.90 5.64
0.232 0.250 5.90 6.35
0.148 0.167 3.75 4.25
0.126 0.154 3.20 3.92
0.189 0.213 4.80 5.40
0.222 0.239 5.65 6.06
0.045 0.059 1.15 1.50
0.012 0.020 0.30 0.50
0.046 0.054 1.17 1.37
0.012 0.028 0.30 0.71
0.016 0.028 0.40 0.71
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Internal Structure and Marking Code
8
7
6
5
D
D
D
D
8
7
6
5
L
M
N
MCC
MCAC130N04Y
4 codes in total
YY is the year
WW is the week
YYWW
1
2
3
4
S
S
S
G
1
2
3
4
Rev.4-2-07272023
1/6
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