MCAC50N03
Features
•
•
•
•
•
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High Density Cell Desihn for Low RDS(on)
Fully Characterized Avalanche Voltage and Current
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
N-CHANNEL
Halogen Free Available Upon Request By Adding Suffix "-HF"
MOSFET
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
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Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
DFN5060-8L
Thermal Resistance: 3.3°C/W Junction to Ambient
Parameter
Rating
30
Symbol
VDS
Unit
V
Drain-Source Voltage
Gate-Source Volltage
D1
VGS
±20
50
V
TC=25°C
A
ID
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
TC=100°C
30
A
IDM
EAS
PD
200
70
A
•
PIN 1
mJ
W
D
Total Power Dissipation
38
e
B
Note: 1.Pulse Width Limited by Maximum Junction Temperature.
2.EAS Condition: TJ=25°C,VDD=15V,VG=10V,L=0.1mH,Rg=25Ω.
Internal Structure
DIMENSIONS
INCHES
MIN MAX MIN MAX
MM
D
D
D
D
DIM
NOTE
8
7
6
5
A
B
C
D
0.035 0.047 0.90 1.20
0.012 0.020 0.30 0.51
0.007 0.010 0.19 0.25
0.189 0.209 4.80 5.30
D1 0.157 0.173 4.00 4.40
0.232 0.244 5.90 6.20
E1 0.217 0.228 5.50 5.80
1
2
3
4
E
S
S
S
G
0.050
1.27
TYP.
e
F
0.002 0.012 0.05 0.30
F1 0.014 0.030 0.35 0.75
0.002 0.012 0.05 0.30
G1 0.014 0.030 0.35 0.75
G
H
K
0.131 0.154 3.34 3.90
0.030 ----- 0.762 -----
Rev.3-1-01012019
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