MCAC120N04YHE3
Features
•
•
•
•
AEC-Q101 Qualified
Split Gate Trench MOSFET Technology
High Density Cell Design For Low R
Moisture Sensitivity Level 1
DS(on)
N-CHANNEL
•
•
Halogen Free. “Green” Device (Note 1)
Epoxy Meets UL 94 V-0 Flammability Rating
MOSFET
•
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
DFN5060
•
•
•
•
Operating Junction Temperature Range : -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
Thermal Resistance: 50°C/W Junction to Ambient(Note 2)
Thermal Resistance: 1.8°C/W Junction to Case
Parameter
Rating
40
Symbol
VDS
Unit
V
D
H
Drain-Source Voltage
Gate-Source Volltage
B
A
N
VGS
±20
120
85
V
•
PIN 1
G
C
TC=25°C
J
ID
A
Continuous Drain Current
TC=100°C
E
Pulsed Drain Current(Note3)
IDM
PD
480
83
A
F
Total Power Dissipation (Note 4)
W
K
Single Pulse Avalanche Energy (Note 5)
EAS
156
mJ
M
L
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DIMENSIONS
MM
MIN MAX MIN MAX
0.031 0.047 0.80 1.20
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INCHES
DIM
NOTE
TYP.
ꢊꢂ 7- ꢍꢊ℃ꢈꢃ9'' 309ꢈꢃ9*6 109ꢈꢃ/ 0.5P+.
A
B
C
D
E
F
G
H
K
J
0.010
0.254
0.193 0.222 4.90 5.64
0.232 0.250 5.90 6.35
0.148 0.167 3.75 4.25
0.126 0.154 3.20 3.92
0.189 0.213 4.80 5.40
0.222 0.239 5.65 6.06
0.045 0.059 1.15 1.50
0.012 0.020 0.30 0.50
0.046 0.054 1.17 1.37
0.012 0.028 0.30 0.71
0.016 0.028 0.40 0.71
Internal Structure and Marking Code
8
7
6
5
D
D
D
D
8
7
6
5
MCC
MCAC120N04Y
YYWW
4 codes in total
YY is the year
WW is the week
L
M
N
1
2
3
4
1
2
3
4
S
S
S
G
Rev.4-1-01032024
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