MCAC115P02
Features
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•
•
•
•
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Trench Power LV MOSFET Technology
Low RDS(on) &FOM
Moisture Sensitivity Level 3
P-CHANNEL
Halogen Free. “Green” Device (Note1)
MOSFET
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
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•
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Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance:50°C/W Junction to Ambient(Steady-State)(Note2)
DFN5060
Thermal Resistance:1.5°C/W Junction to Case(Steady-State)
Parameter
Rating
Symbol
VDS
Unit
V
D
H
B
A
N
Drain-Source Voltage
Gate-Source Volltage
-20
•
±10
VGS
V
PIN 1
G
C
J
-115
-73
TC=25°C
ID
Continuous Drain Current
A
TC=100°C
E
F
Pulsed Drain Current(Note3)
IDM
PD
-460
A
W
Total Power Dissipation(Note4)
K
83.3
M
Single Pulsed Avalanche Energy(Note5)
EAS
400
L
mJ
Note:
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on
RθJA tʇꢀ10s and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
DIMENSIONS
MM
MIN MAX MIN MAX
0.031 0.047 0.80 1.20
INCHES
DIM
NOTE
TYP.
A
B
C
D
E
F
G
H
K
J
0.010
0.254
3. Repetitive rating; pulse width limited by max. junction temperature.
4. PD is based on max. junction temperature, using junction-case thermal resistance.
5. TJ=25ǔ, VDD=-20V, VGS=-5V, L=2mH
0.193 0.222 4.90 5.64
0.232 0.250 5.90 6.35
0.148 0.167 3.75 4.25
0.126 0.154 3.20 3.92
0.189 0.213 4.80 5.40
0.222 0.239 5.65 6.06
0.045 0.059 1.15 1.50
0.012 0.020 0.30 0.50
0.046 0.054 1.17 1.37
0.012 0.028 0.30 0.71
0.016 0.028 0.40 0.71
Internal Structure and Marking Code
8
7
6
5
D
D
D
D
8
7
6
5
L
M
N
MCC
MCAC115P02
1
2
3
4
S
S
S
G
1
2
3
4
Rev.4-1-05092023
1/6
MCCSEMI.COM