是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TSSOP |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.46 | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 25C 时的最大偏置电流 (IIB): | 0.5 µA |
频率补偿: | YES | 最大输入失调电压: | 3000 µV |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
低-偏置: | NO | 低-失调: | NO |
微功率: | NO | 标称负供电电压 (Vsup): | -15 V |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP8,.19 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 包装方法: | TUBE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 功率: | NO |
电源: | +-15 V | 可编程功率: | NO |
认证状态: | Not Qualified | 标称压摆率: | 5 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 9 mA |
供电电压上限: | 18 V | 标称供电电压 (Vsup): | 15 V |
表面贴装: | YES | 技术: | BIPOLAR |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.635 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最小电压增益: | 31620 | 宽带: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MC458A | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.15A, 150V V(RRM), Silicon | |
MC-458AA724F-A10 | NEC |
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Synchronous DRAM Module, 8MX72, 8ns, MOS, DIMM-168 | |
MC-458AA724F-A12 | NEC |
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Synchronous DRAM Module, 8MX72, 9ns, MOS, DIMM-168 | |
MC-458AB644F-A10 | ELPIDA |
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Synchronous DRAM Module, 8MX64, 8ns, MOS, DIMM-168 | |
MC-458AB644F-A12 | ELPIDA |
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Synchronous DRAM Module, 8MX64, 9ns, MOS, DIMM-168 | |
MC-458CA721ESA | ELPIDA |
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8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) | |
MC-458CA721ESA | NEC |
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8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM | |
MC-458CA721ESA-A10 | NEC |
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8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM | |
MC-458CA721ESA-A10 | ELPIDA |
获取价格 |
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) | |
MC-458CA721ESA-A80 | ELPIDA |
获取价格 |
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |