Datasheet > MC-4516CB64ES

MC-4516CB64ES

更新时间： 2024-01-02 14:59:05

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	130K
描述
16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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中文翻译

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数据手册

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MC-4516CB64ES 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516CB64ES, 4516CB64PS

16 M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-4516CB64ES and MC-4516CB64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module

(Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128841 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS Latency

CL = 3

Clock frequency (MAX.)

100 MHz

Access time from CLK (MAX.)

MC-4516CB64ES-A10B

7 ns

8 ns

7 ns

8 ns

CL = 2

67 MHz

★

MC-4516CB64PS-A10B

CL = 3

100 MHz

CL = 2

67 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single +3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark • shows major revised points.

Document No. M13611EJ5V0DS00 (5th edition)

Date Published February 2000 NS CP (K)

Printed in Japan

1998

12 3 4 5 6 7...16

中文翻译

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与MC-4516CB64ES相关器件

型号	品牌	获取价格	描述	数据表
MC-4516CB64ES-A10B	NEC	获取价格	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CB64ES-A10BL	NEC	获取价格	Synchronous DRAM Module, 16MX64, 7ns, MOS, SODIMM-144
MC-4516CB64KS-A10BL	RENESAS	获取价格	MEMORY MODULE,SDRAM,16MX64,CMOS,DIMM,144PIN,PLASTIC
MC-4516CB64PS	NEC	获取价格	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CB64PS-A10B	NEC	获取价格	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CB64S-10	RENESAS	获取价格	MEMORY MODULE,SDRAM,16MX64,CMOS,DIMM,144PIN,PLASTIC
MC-4516CB64S-10B	RENESAS	获取价格	MEMORY MODULE,SDRAM,16MX64,CMOS,DIMM,144PIN,PLASTIC
MC-4516CB64S-10BL	RENESAS	获取价格	MEMORY MODULE,SDRAM,16MX64,CMOS,DIMM,144PIN,PLASTIC
MC-4516CB64S-80	RENESAS	获取价格	MEMORY MODULE,SDRAM,16MX64,CMOS,DIMM,144PIN,PLASTIC
MC-4516CB64S-A10	NEC	获取价格	Synchronous DRAM Module, 16MX64, 6ns, MOS, SODIMM-144

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