Datasheet > MC-4516CD641ES

MC-4516CD641ES

更新时间： 2024-02-09 07:26:27

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
16页	151K
描述
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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中文翻译

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数据手册

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MC-4516CD641ES 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516CD641ES, 4516CD641PS

16M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM

module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 16,777,216 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

CL = 3

Clock frequency (MAX.)

125 MHz

Access time from CLK (MAX.)

MC-4516CD641ES-A80

6 ns

7 ns

6 ns

7 ns

CL = 2

100 MHz

MC-4516CD641ES-A10

MC-4516CD641PS-A80

MC-4516CD641PS-A10

CL = 3

100 MHz

CL = 2

77 MHz

★

CL = 3

125 MHz

CL = 2

100 MHz

CL = 3

100 MHz

CL = 2

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0, BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single 3.3V ±0.3V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14014EJ5V0DS00 (5th edition)

Date Published February 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1999

12 3 4 5 6 7...16

中文翻译

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与MC-4516CD641ES相关器件

型号	品牌	获取价格	描述	数据表
MC-4516CD641ES-A10	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641ES-A10	NEC	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD641ES-A10L	NEC	获取价格	Synchronous DRAM Module, 16MX64, 6ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144
MC-4516CD641ES-A80	NEC	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD641ES-A80	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641ES-A80L	NEC	获取价格	暂无描述
MC-4516CD641PS	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-4516CD641PS	NEC	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD641PS-A10	NEC	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CD641PS-A10	ELPIDA	获取价格	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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