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MBRP20030CTL PDF预览

MBRP20030CTL

更新时间: 2024-11-23 11:11:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管局域网
页数 文件大小 规格书
2页 119K
描述
Schottky Powermod

MBRP20030CTL 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Transferred针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.72
其他特性:LOW POWER LOSS应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUFM-X2最大非重复峰值正向电流:2500 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:150 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED

MBRP20030CTL 数据手册

 浏览型号MBRP20030CTL的Datasheet PDF文件第2页 
Schottky Powermod  
CPT30230  
A
R
G
Dim. Inches  
Millimeters  
Min.  
Max. Notes  
Max. Min.  
Baseplate  
A=Common Anode  
---  
17.78  
---  
92.20  
20.32  
A ---  
B 0.700  
C ---  
E 0.120  
F 0.490  
3.630  
0.800  
0.630  
0.130  
0.510  
B
16.00  
3.30  
12.95  
3.05  
12.45  
Q
N
W
1.375 BSC  
G
34.92 BSC  
0.25  
---  
6.99  
H 0.010  
N ---  
Q 0.275  
---  
---  
0.290  
---  
---  
7.37  
Baseplate  
1/4-20  
Dia.  
Common Cathode  
F
U
U
R
80.01 BSC  
3.150 BSC  
15.24  
7.92  
4.57  
---  
8.64  
4.95  
U 0.600  
V 0.312  
W 0.180  
---  
0.340  
0.195  
C
Baseplate  
D=Doubler  
H
Dia.  
Notes:  
Baseplate: Nickel plated  
copper  
V
E
Schottky Barrier Rectifier  
Guard Ring Protection  
Low Power Loss  
Working Peak  
Reverse Voltage Reverse Voltage  
Repetitive Peak  
Microsemi  
Catalog Number Part Number  
Industry  
150°C Junction Temperature  
300 Amperes/30 Volts  
Reverse Energy Tested  
ROHS Compliant  
CPT30230* MBRP20030CTL  
30V  
30V  
*Add Suffix A for Common Anode, D for Doubler  
Electrical Characteristics  
R
R
T
T
l
l
F(AV) 300 Amps  
F(AV) 150 Amps  
FSM 2500 Amps  
R(OV) 2 Amps  
FM .55 Volts  
RM 1.5 Amps  
RM 10 mA  
C = 103°C, square wave, 0JC = 0.2°C/W  
Average forward current per package  
Average forward current per leg  
Maximum surge current per leg  
Maximum repetitive reverse current per leg  
Max peak forward voltage per leg  
C = 103°C, square wave, 0JC = 0.4°C/W  
T
l
I
8.3ms, half sine, J = 150°C  
T
f = 1 KHz, 1µsec square wave, J = 25°C  
T
V
I
FM = 150A: J = 25°C*  
I
I
C
Max peak reverse current per leg  
Max peak reverse current per leg  
Typical junction capacitance per leg  
V
V
V
T
RRM, J = 125°C  
T
RRM, J = 25°C  
T
J 4900 pF  
R = 5V, J = 25°C, f = 1MHz  
*Pulse test: Pulse width 300µsec, Duty cycle 2%  
Thermal and Mechanical Characteristics  
Storage temp range  
Operation junction temp range  
Max thermal resistance per leg  
T
-55°C to 175°C  
-55°C to 150°C  
STG  
J
0JC  
T
R
Junction to case  
Junction to case  
Case to sink  
0.4°C/W  
0.2°C/W  
0.08°C/W  
R
R
Max thermal resistance per pkg  
Typical thermal resistance (greased)  
Terminal Torque  
JC  
CS  
0
0
35-50 inch pounds  
30-40 inch pounds  
8-10 inch pounds  
Mounting Base Torque (outside holes)  
Mounting Base Torque (center hole)  
center bolt must be torqued first  
2.8 ounces (75 grams) typical  
Weight  
www.microsemi.com  
January, 2010 - Rev. 5  

MBRP20030CTL 替代型号

型号 品牌 替代类型 描述 数据表
MBRP20030CTL MOTOROLA

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