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MBRD20100CT PDF预览

MBRD20100CT

更新时间： 2024-09-19 01:06:55
品牌 Logo 应用领域
THINKISEMI 二极管
页数 文件大小 规格书
2页 533K
描述
20.0 Amperes Surface Mount Common Cathode Schottky Barrier Half Bridge Rectifiers

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MBRD20100CT 数据手册

 浏览型号MBRD20100CT的Datasheet PDF文件第2页 
MBRD2045CT thru MBRD20200CT  
MBRD2045CT/MBRD2060CT/MBRD20100CT/MBRD20200CT  
Pb Free Plating Product  
20.0 Amperes Surface Mount Common Cathode Schottky Barrier Half Bridge Rectifiers  
TO-252/DPAK  
Unit : inch (mm)  
Features  
(
)
)
(
)
)
.264 6.7  
(
.248 6.3  
.098 2.5  
ꢀ MBR matured technology with high reliablity  
(
.082 2.1  
ꢀ Low forward voltage drop  
ꢀ High current capability  
ꢀ Low reverse leakage current  
ꢀ High surge current capability  
Application  
(
)
)
.024 0.6  
(
)
)
.216 5.5  
(
.016 0.4  
(
.200 5.1  
4
Automotive Inverters/Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
(
)
)
.106 2.7  
2
(
.090 2.3  
1
3
Mechanical Data  
ꢀ Case: DPAK/TO-252-2L outline  
ꢀ Epoxy: UL 94V-0 rate flame retardant  
(
.02 .5  
)
)
(
)
)
.032 0.8  
(
.012 0.3  
(
.09 .09  
.071 1.8  
( )  
.051 1.3  
(
) (  
2.3 2.3  
)
ꢀ
method 208  
Terminals: Solderable per MIL-STD-202  
4
ꢀ Polarity: As marked on diode body  
ꢀ Mounting position: Any  
ꢀ Weight: 0.35 gram approximately  
4
4
4
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Positive  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)  
MBRD2045CT MBRD2060CT MBRD20100CT MBRD20200CT  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
45  
31  
45  
60  
42  
60  
100  
70  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
20  
20  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=10A, TJ=25℃  
-
0.80  
0.70  
0.95  
0.85  
0.85  
0.75  
0.95  
0.85  
0.99  
0.87  
1.23  
1.10  
IF=10A, TJ=125℃  
VF  
0.57  
0.84  
0.72  
V
IF=20A, TJ=25℃  
IF=20A, TJ=125℃  
0.1  
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=125 ℃  
IR  
mA  
15  
10  
5
0.15  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
RθJC  
TJ  
V/μs  
°C/W  
°C  
5.5  
6.0  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com.tw/  
12

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