MBRD2045CT thru MBRD20200CT
Pb
MBRD2045CT/MBRD2060CT/MBRD20100CT/MBRD20200CT
Pb Free Plating Product
20.0 Amperes Surface Mount Common Cathode Schottky Barrier Half Bridge Rectifiers
TO-252/DPAK
Unit : inch (mm)
Features
(
)
)
(
)
)
.264 6.7
(
.248 6.3
.098 2.5
ꢀ MBR matured technology with high reliablity
(
.082 2.1
ꢀ Low forward voltage drop
ꢀ High current capability
ꢀ Low reverse leakage current
ꢀ High surge current capability
Application
(
)
)
.024 0.6
(
)
)
.216 5.5
(
.016 0.4
(
.200 5.1
4
Automotive Inverters/Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
(
)
)
.106 2.7
2
(
.090 2.3
1
3
Mechanical Data
ꢀ Case: DPAK/TO-252-2L outline
ꢀ Epoxy: UL 94V-0 rate flame retardant
(
.02 .5
)
)
(
)
)
.032 0.8
(
.012 0.3
(
.09 .09
.071 1.8
( )
.051 1.3
(
) (
2.3 2.3
)
ꢀ
method 208
Terminals: Solderable per MIL-STD-202
4
ꢀ Polarity: As marked on diode body
ꢀ Mounting position: Any
ꢀ Weight: 0.35 gram approximately
4
4
4
Doubler
Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Series
Negative
Positive
Common Cathode Common Anode
Suffix "CT" Suffix "CTA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBRD2045CT MBRD2060CT MBRD20100CT MBRD20200CT
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
45
31
45
60
42
60
100
70
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
20
20
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
150
A
A
Peak repetitive reverse surge current (Note 1)
1
0.5
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25℃
-
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.99
0.87
1.23
1.10
IF=10A, TJ=125℃
VF
0.57
0.84
0.72
V
IF=20A, TJ=25℃
IF=20A, TJ=125℃
0.1
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
15
10
5
0.15
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
dV/dt
RθJC
TJ
V/μs
°C/W
°C
5.5
6.0
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/