Datasheet > MBRD1035CTL_10

MBRD1035CTL_10

更新时间： 2024-11-18 11:11:31

品牌	Logo	应用领域
安森美 - ONSEMI		开关
页数	文件大小	规格书
6页	106K
描述
SWITCHMODE Schottky Power Rectifier

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中文翻译

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数据手册

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MBRD1035CTL_10 数据手册

MBRD1035CTL

SWITCHMODE

Schottky Power Rectifier

DPAK Power Surface Mount Package

The MBRD1035CTL employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State of the art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

switching power supplies, free wheeling diode and polarity protection

diodes.

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

10 AMPERES

35 VOLTS

Features

• Highly Stable Oxide Passivated Junction

• Guardring for Stress Protection

• Matched Dual Die Construction −

May be Paralleled for High Current Output

• High dv/dt Capability

• Short Heat Sink Tap Manufactured − Not Sheared

• Very Low Forward Voltage Drop

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Pb−Free Packages are Available

Mechanical Characteristics:

• Case: Epoxy, Molded

DPAK

CASE 369C

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

MARKING DIAGRAM

YWW

B10

35CLG

= Year

= Work Week

B1035CL = Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

July, 2010 − Rev. 7

MBRD1035CTL/D

12 3 4 5 6

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