Datasheet > MBRD1035CTLG (KBRD1035CTLG)

MBRD1035CTLG (KBRD1035CTLG)

更新时间： 2024-06-27 12:11:44

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1274K
描述
Schottky Diodes

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MBRD1035CTLG (KBRD1035CTLG) 数据手册

浏览型号MBRD1035CTLG (KBRD1035CTLG)的Datasheet PDF文件第2页

SMD Type

Diodes

Schottky Barrier Rectifiers

MBRD1035CTLG (KBRD1035CTLG)

TO-252

Unit: mm

■ Features

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

● Fast Switching Speed

+0.2

-0.2

5.30

0.50

● For General Purpose Switching Applications.

● High Conductance

0.127

max

+0.1

-0.1

0.80

+ 0.1

- 0.1

0.60

2.3

4.60

+0.15

-0.15

1. Anode 2.4Cathode 3. Anode

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

Rating

Unit

RRM

RWM

Maximum Average Forwardt (Per Leg)

(AV)

Rectified Curren

(Per Device)

100

Peak Forward Surge Current

8.3ms

Thermal Resistance Junction to Case¹

θJC

℃/W

Junction Temperature

175

℃

Storage Temperature range

stg

-65 to +175

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Reverse breakdown voltage

IR= 100 uA

0.5

0.42

= 5 A

TJ=25℃

Forward voltage

TJ=125℃

TJ=25℃

Reverse voltage leakage current ²

TJ=125℃

Notes: 1. Device mounted on Polymide substrate, 125mm2 copper pad, double-sided, PC boards.

2. Short duration pulse test used to minimize self-heating effect.

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