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MBRD1045

更新时间： 2022-11-18 16:53:30
品牌 Logo 应用领域
安森美 - ONSEMI 开关
页数 文件大小 规格书
6页 102K
描述
SWITCHMODE Schottky Power Rectifier

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中文翻译

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MBRD1045 数据手册

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MBRB1045, MBRD1045  
Preferred Device  
SWITCHMODEt  
Schottky Power Rectifier  
Surface Mount Power Package  
This series of Power Rectifiers employs the Schottky Barrier  
principle in a large metal−to−silicon power diode. State−of−the−art  
geometry features epitaxial construction with oxide passivation and  
metal overlay contact. Ideally suited for use in low voltage, high  
frequency switching power supplies, free wheeling diodes, and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
10 AMPERES, 45 VOLTS  
Features  
• Guardring for Stress Protection  
• Low Forward Voltage  
• 175°C Operating Junction Temperature  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Short Heat Sink Tab Manufactured − Not Sheared!  
• Pb−Free Packages are Available  
1
4
3
MARKING DIAGRAM  
4
AY WW  
Mechanical Characteristics:  
MBRB1045G  
AKA  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
1
2
3
• Weight: 1.7 grams for D PAK (approximately)  
2
0.4 grams for DPAK (approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
D PAK  
CASE 418B  
PLASTIC  
A
Y
= Assembly Location  
= Year  
= Work Week  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
WW  
• Device Meets MSL1 Requirements  
• ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
MBRB1045 = Device Code  
G
= Pb−Free Package  
= Diode Polarity  
AKA  
MAXIMUM RATINGS  
MARKING DIAGRAM  
4
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
45  
V
RRM  
RWM  
YWW  
B10  
45G  
2
1
3
R
DPAK  
CASE 369C  
Average Rectified Forward Current  
I
10  
20  
A
A
F(AV)  
(Rated V ) T = 135°C  
R
C
Y
= Year  
= Work Week  
Peak Repetitive Forward Current  
I
FRM  
(Rated V , Square Wave, 20 kHz)  
WW  
B1045  
G
R
T
= 135°C  
C
= Device Code  
= Pb−Free Package  
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
150 (MBRB)  
70 (MBRD)  
A
FSM  
Operating Junction and Storage  
Temperature Range (Note 1)  
T , T  
−65 to +175  
°C  
J
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Voltage Rate of Change (Rated V )  
dv/dt  
10000  
V/ms  
R
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 − Rev. 7  
MBRB1045/D  
 
123456

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