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MBRD1040CT-T PDF预览

MBRD1040CT-T

更新时间: 2024-11-20 22:40:23
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线功效
页数 文件大小 规格书
3页 65K
描述
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

MBRD1040CT-T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DPAK包装说明:R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.66Is Samacsys:N
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.41 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:2
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

MBRD1040CT-T 数据手册

 浏览型号MBRD1040CT-T的Datasheet PDF文件第2页浏览型号MBRD1040CT-T的Datasheet PDF文件第3页 
MBRD1040CT  
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
Features  
·
Guard Ring Die Construction for  
Transient Protection  
DPAK  
·
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
Very Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, OR’ing, and Polarity Protection  
Applications  
Min  
6.3  
¾
Max  
6.7  
10  
Dim  
A
E
A
G
H
B
P
4
C
0.3  
0.8  
D
2.3 Nominal  
·
Plastic Material: UL Flammability  
J
E
2.1  
0.4  
1.2  
5.3  
2.5  
0.6  
1.6  
5.7  
Classification Rating 94V-0  
B
G
H
1
2
3
Mechanical Data  
J
M
·
·
Case: DPAK Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: See Sheet 2  
Weight: 0.4 grams (approx.)  
Ordering Information, See Below  
K
0.5 Nominal  
D
K
L
1.3  
1.0  
5.1  
1.8  
¾
C
L
M
P
·
·
·
·
5.5  
PIN 1  
PIN 3  
PIN 4, BOTTOMSIDE  
HEAT SINK  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
28  
V
VR(RMS)  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
(See Figure 4)  
Per Element  
Per Package  
5
10  
IO  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave Superimposed on Rated Load  
Per Package (JEDEC Method)  
IFSM  
75  
A
RqJC  
dv/dt  
Tj  
Typical Thermal Resistance Junction to Case Per Element (Note 1)  
Voltage Rate of Change @ VR = 35V, Tj = 25°C  
Operating Temperature Range  
2.43  
°C/W  
V/ms  
°C  
10,000  
-55 to +125  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
Notes:  
1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas.  
(Note 2)  
Ordering Information  
Device  
Packaging  
Shipping  
MBRD1040CT-T  
DPAK  
2500/Tape & Reel  
Notes:  
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
DS30285 Rev. C-2  
1 of 3  
MBRD1040CT  

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