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MBRD1040S-T3-LF PDF预览

MBRD1040S-T3-LF

更新时间： 2024-11-18 14:53:11
品牌 Logo 应用领域
WTE 功效瞄准线二极管
页数 文件大小 规格书
4页 43K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-252, DPAK-3/2

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MBRD1040S-T3-LF 数据手册

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®
MBRD1020/S – MBRD10100/S  
10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
A
B
C
J
Guard Ring Die Construction for  
Transient Protection  
D
High Surge Current Capability  
Low Power Loss, High Efficiency  
Ideally Suited for Automatic Assembly  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
E
PIN 1  
2
3
K
G
H
L
P
P
DPAK/TO-252  
Min  
Mechanical Data  
Dim  
A
B
C
D
E
Max  
6.65  
5.55  
2.40  
1.25  
6.08  
3.00  
0.90  
0.55  
1.25  
0.55  
6.05  
Case: DPAK/TO-252, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
5.05  
PIN 1  
PIN 3  
2.25  
Case, PIN 2  
(MBRD1020 Series)  
1.05  
Polarity: See Diagram  
Weight: 0.3 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
5.48  
G
H
J
2.55  
0.55  
PIN 3  
Case, PIN 2  
(MBRD1020S Series)  
0.49  
K
L
0.95  
0.49  
P
2.30 Typical  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
MBRD  
1020/S  
MBRD  
1030/S  
MBRD  
1040/S  
MBRD  
1045/S  
MBRD  
1050/S  
MBRD  
1060/S  
MBRD  
MBRD  
Characteristic  
Symbol  
Unit  
1080/S 10100/S  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
45  
32  
50  
35  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current @TC = 125°C  
10  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
100  
A
Forward Voltage  
@IF = 10A  
VFM  
IRM  
CJ  
0.55  
0.75  
0.85  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.2  
15  
Typical Junction Capacitance (Note 1)  
450  
350  
Thermal Resistance, Junction to Ambient (Note 2)  
Thermal Resistance, Junction to Case (Note 2)  
RθJA  
RθJC  
70  
2.5  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
2. Mounted on FR-4 PC board with minimum recommended pad layout.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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