Datasheet > MBRD1040CT-T3

MBRD1040CT-T3

更新时间： 2024-11-21 14:53:11

品牌	Logo	应用领域
WTE		功效瞄准线二极管
页数	文件大小	规格书
4页	43K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 40V V(RRM), Silicon, TO-252, DPAK-3/2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRD1040CT-T3 数据手册

MBRD1020CT – MBRD10100CT

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection



High Surge Current Capability

Low Power Loss, High Efficiency

Ideally Suited for Automatic Assembly

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

DPAK/TO-252

Min

Mechanical Data

Dim

Max

6.65

5.55

2.40

1.25

6.08

3.00

0.90

0.55

1.25

0.55

6.05



Case: DPAK/TO-252, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

5.05

PIN 1

PIN 3

2.25

Case, PIN 2

1.05



Polarity: See Diagram

Weight: 0.3 grams (approx.)

Mounting Position: Any

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

5.48

2.55

0.55

0.49

0.95

0.49

2.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MBRD

Characteristic

Symbol

Unit

1020CT 1030CT 1040CT 1045CT 1050CT 1060CT 1080CT 10100CT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 115°C

Total Device

Per Diode

5.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

100

Forward Voltage per diode

@I_F= 5.0A

VFM

IRM

0.55

500

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

0.2

Typical Junction Capacitance (Note 1)

380

Thermal Resistance, Junction to Ambient (Note 2)

Thermal Resistance, Junction to Case (Note 2)

RθJA

RθJC

2.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

2. Mounted on FR-4 PC board with minimum recommended pad layout per diode.

Revision: September, 2012

www.wontop.com

12 3 4

中文翻译

下载PDF

与MBRD1040CT-T3相关器件

型号	品牌	获取价格	描述	数据表
MBRD1040CT-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 40V V(RRM), Silicon, TO-252, DPAK-3/2
MBRD1040D	MDD	获取价格	SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
MBRD1040S	WON-TOP	获取价格	SMD
MBRD1040S-T3	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-252, DPAK-3/2
MBRD1040S-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-252, DPAK-3/2
MBRD1040T	MDD	获取价格	SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
MBRD1040-T	DIODES	获取价格	10A LOW VF SCHOTTKY BARRIER RECTIFIER
MBRD1045	JINANJINGHENG	获取价格	TO-252 SCHOTTKY BARRIER RECTIFIER
MBRD1045	ONSEMI	获取价格	SWITCHMODE Schottky Power Rectifier
MBRD1045	WON-TOP	获取价格	SMD

与MBRD1040CT-T3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRD1040CT-T3

MBRD1040CT-T3 数据手册

与MBRD1040CT-T3相关器件

与MBRD1040CT-T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRD1040CT-T3

MBRD1040CT-T3 数据手册

与MBRD1040CT-T3相关器件

与MBRD1040CT-T3相关文章

您还可以找

您在本页遇到什么问题？