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MBRB30H90CT-E3/31 PDF预览

MBRB30H90CT-E3/31

更新时间： 2024-10-30 21:18:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 151K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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MBRB30H90CT-E3/31 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.74Base Number Matches：1

MBRB30H90CT-E3/31 数据手册

 浏览型号MBRB30H90CT-E3/31的Datasheet PDF文件第2页浏览型号MBRB30H90CT-E3/31的Datasheet PDF文件第3页浏览型号MBRB30H90CT-E3/31的Datasheet PDF文件第4页浏览型号MBRB30H90CT-E3/31的Datasheet PDF文件第5页 
MBR30H90CT & MBR30H100CT  
New Product  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for improved high temperature performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
MBR30H90CT  
MBR30H100CT  
1
MBRF30H90CT  
MBRF30H100CT  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
• Solder Dip 260 °C, 40 seconds (for TO-220AB &  
ITO-220AB package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
1
TYPICAL APPLICATIONS  
MBRB30H90CT  
MBRB30H100CT  
For use in high frequency rectifier of switching  
mode power supplies, free-wheeling diodes, dc-to-dc  
converters or polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
15 A x 2  
90 V, 100 V  
275 A  
0.67 V  
IR  
5.0 µA  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
Tj max  
175 °C  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR30H90CT MBR30H100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
Total device  
per diode  
30  
15  
Maximum average forward rectified current (see Fig. 1)  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
275  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
1.0  
A
10000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Isolation voltage (ITO-220AB only)  
From terminal to heatsink t = 1 minute  
VAC  
1500  
V
Document Number 88791  
22-Aug-06  
www.vishay.com  
1
12345

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 		Tube: 50pcs/Tube, 5K/Ctn,Tape:800pcs/Reel,8K/Ctn.;

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