Datasheet > MBRB4030T4

MBRB4030T4

更新时间： 2024-11-01 11:11:31

品牌	Logo	应用领域
安森美 - ONSEMI		开关
页数	文件大小	规格书
6页	64K
描述
SWITCHMODE Power Rectifier

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中文翻译

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数据手册
替代型号

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MBRB4030T4 数据手册

MBRB4030

Preferred Device

SWITCHMODEt

Power Rectifier

These state−of−the−art devices use the Schottky Barrier principle

with a proprietary barrier metal.

Features

http://onsemi.com

• Guardring for Stress Protection

• Maximum Die Size

• 175°C Operating Junction Temperature

• Short Heat Sink Tab Manufactured − Not Sheared

• Pb−Free Packages are Available

SCHOTTKY BARRIER

RECTIFIER

40 AMPERES, 30 VOLTS

Mechanical Characteristics:

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

• Weight: 1.7 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads Readily Solderable

• Device Meets MSL1 Requirements

• ESD Ratings: Machine Model, C (>400 V)

Human Body Model, 3B (>8000 V)

D PAK

CASE 418B

STYLE 3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

MARKING DIAGRAM

RWM

Average Rectified Forward Current

AY WW

F(AV)

(At Rated V ) T = +115°C (Note 1)

B4030G

AKA

Peak Repetitive Forward Current

(At Rated V , Square Wave, 20 kHz),

FRM

= +112°C

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

300

2.0

FSM

= Assembly Location

= Year

= Work Week

Peak Repetitive Reverse Surge Current

(2.0 ms, 1.0 kHz)

RRM

B4030 = Device Code

AKA

= Pb−Free Package

= Diode Polarity

Storage Temperature Range

−65 to +175

°C

stg

Operating Junction Temperature Range

(Note 2)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Voltage Rate of Change (Rated V )

dv/dt

10,000

600

V/ms

Reverse Energy (Unclamped Inductive

Surge), (T = 25°C, L = 3.0 mH)

Preferred devices are recommended choices for future use

and best overall value.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Rating applies when pins 1 and 3 are connected.

2. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dP /dT < 1/R .

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

September, 2006 − Rev. 6

MBRB4030/D

12 3 4 5 6

中文翻译

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MBRB4030T4 替代型号

型号	品牌	替代类型	描述	数据表
MBRB4030	ONSEMI	完全替代	SWITCHMODE Power Rectifier
MBRB4030G	ONSEMI	类似代替	SWITCHMODE Power Rectifier
MBRB4030T4G	ONSEMI	类似代替	SWITCHMODE Power Rectifier

与MBRB4030T4相关器件

型号	品牌	获取价格	描述	数据表
MBRB4030T4G	ONSEMI	获取价格	SWITCHMODE Power Rectifier
MBRB4035CTPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, LEAD FREE, PLASTI
MBRB4035CTTRLP	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, LEAD FREE, PLASTI
MBRB4035CTTRRP	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, LEAD FREE, PLASTI
MBRB4040CT	BL Galaxy Electrical	获取价格	40A,40V,Schottky Barrier Rectifiers
MBRB4045CT	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A
MBRB4045CT	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBRB4045CT	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon, PLASTIC, D2PAK-3
MBRB4045CT-1P	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A
MBRB4045CT-1PBF	VISHAY	获取价格	Schottky Rectifier, 2 x 20 A

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