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MBRB4030G

更新时间： 2024-11-01 11:11:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关
页数 文件大小 规格书
6页 64K
描述
SWITCHMODE Power Rectifier

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中文翻译

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MBRB4030G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-263包装说明：LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：1.62其他特性：UL RECOGNIZED
应用：POWER外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.34 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：300 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：40 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：30 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBRB4030G 数据手册

 浏览型号MBRB4030G的Datasheet PDF文件第2页浏览型号MBRB4030G的Datasheet PDF文件第3页浏览型号MBRB4030G的Datasheet PDF文件第4页浏览型号MBRB4030G的Datasheet PDF文件第5页浏览型号MBRB4030G的Datasheet PDF文件第6页 
MBRB4030  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
These state−of−the−art devices use the Schottky Barrier principle  
with a proprietary barrier metal.  
Features  
http://onsemi.com  
• Guardring for Stress Protection  
• Maximum Die Size  
• 175°C Operating Junction Temperature  
• Short Heat Sink Tab Manufactured − Not Sheared  
• Pb−Free Packages are Available  
SCHOTTKY BARRIER  
RECTIFIER  
40 AMPERES, 30 VOLTS  
1
Mechanical Characteristics:  
4
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 1.7 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads Readily Solderable  
3
4
• Device Meets MSL1 Requirements  
• ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
1
3
2
D PAK  
CASE 418B  
STYLE 3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
30  
V
RRM  
MARKING DIAGRAM  
RWM  
R
Average Rectified Forward Current  
I
40  
80  
A
A
AY WW  
F(AV)  
(At Rated V ) T = +115°C (Note 1)  
R
C
B4030G  
AKA  
Peak Repetitive Forward Current  
(At Rated V , Square Wave, 20 kHz),  
I
FRM  
R
T
= +112°C  
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
300  
2.0  
A
A
FSM  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Peak Repetitive Reverse Surge Current  
(2.0 ms, 1.0 kHz)  
I
RRM  
B4030 = Device Code  
G
AKA  
= Pb−Free Package  
= Diode Polarity  
Storage Temperature Range  
T
−65 to +175  
−65 to +175  
°C  
°C  
stg  
Operating Junction Temperature Range  
(Note 2)  
T
J
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Voltage Rate of Change (Rated V )  
dv/dt  
W
10,000  
600  
V/ms  
R
Reverse Energy (Unclamped Inductive  
mJ  
Surge), (T = 25°C, L = 3.0 mH)  
C
Preferred devices are recommended choices for future use  
and best overall value.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Rating applies when pins 1 and 3 are connected.  
2. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
September, 2006 − Rev. 6  
MBRB4030/D  
 
123456

中文翻译

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MBRB4030G 替代型号

型号 品牌 替代类型 描述 数据表
MBRB4030 ONSEMI

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