Datasheet > MBRB30HxxCT

MBRB30HxxCT

更新时间： 2024-09-28 14:54:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	81K
描述
Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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MBRB30HxxCT 数据手册

MBRB30HxxCT

Vishay General Semiconductor

www.vishay.com

Dual Common Cathode Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Power pack

D²PAK (TO-263AB)

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

MBRB30HxxCT

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, or polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

2 x 15 A

45 V, 60 V

150 A

MECHANICAL DATA

Case: D²PAK (TO-263AB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - RoHS-compliant, halogen-free, commercial

grade

V_F

I_R

0.56 V, 0.59 V

80 μA, 60 μA

T_Jmax.

175 °C

D²PAK (TO-263AB)

Base P/NHM3 - RoHS-compliant, halogen-free, AEC-Q101

qualified

Package

Circuit configuration

Common cathode

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: as marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBRB30H45CT

MBRB30H60CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

total device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

150

Peak repetitive reverse surge current per diode at t_p= 2 μs, 1 kHz

Peak non-repetitive reverse energy (8/20 μs waveform)

I_RRM

E_RSM

E_AS

1.0

0.5

Non-repetitive avalanche energy per diode at 25 °C, I_AS= 4 A, L = 10 mH

Electrostatic discharge capacitor voltage human body model:

C = 100 pF, R = 1.5 kΩ

V_C

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

Revision: 27-Sep-2023

Document Number: 87539

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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