MBR8100

更新时间： 2024-09-16 22:24:35

品牌	Logo	应用领域
美台 - DIODES		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	67K
描述
8.0A SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR8100 数据手册

MBR870L - MBR8100L

8.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AC

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Application

Plastic Material: UL Flammability

Classification Rating 94V-0

Dim

Min

14.22

9.65

2.54

5.84

Max

15.88

10.67

3.43

6.86

6.35

12.70

0.51

14.73

1.14

3.53Æ 4.09Æ

Mechanical Data

3.56

1.14

0.30

2.03

4.83

1.40

0.64

2.92

5.33

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Pin 1

Pin 2

Polarity: See Diagram

Case

Weight: 2.24 grams (approx.)

Mounting Position: Any

Marking: Type Number

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

870L

MBR

880L

MBR

890L

MBR

8100L

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V_R(RMS)

I_O

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

8.0

@ T_C= 125°C

Non-Repetitive Peak Forward Surge Current,

8.3ms single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

230

850

I_FRM

V_FM

Repetitive Peak Forward Surge Current

@ t £ 5.0ms

Forward Voltage Drop

@ I_F= 8.0A, T_C25°C

0.72

0.58

@ I_F= 8.0A, T_C= 125°C

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C25°C

0.55

7.0

I_RM

@ T_C= 125°C

C_j

Typical Junction Capacitance (Note 2)

350

2.0

K/W

V/ms

°C

R_qJC

Typical Thermal Resistance Junction to Case (Note 1)

Voltage Rate of Change (Rated V_R)

dV/dt

T_j,T_STG

10,000

Operating and Storage Temperature Range

-55 to +175

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS30029 Rev. B-4

1 of 2

MBR870L-MBR8100L

中文翻译

下载PDF

与MBR8100相关器件

型号	品牌	获取价格	描述	数据表
MBR8100-B	MCC	获取价格	Rectifier Diode,
MBR8100-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC,
MBR8100C	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR8100CD	DYELEC	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR8100CD	SENO	获取价格	8.0 A SCHOTTKY BARRIER DIODE
MBR8100CP	SENO	获取价格	8.0 A SCHOTTKY BARRIER DIODE
MBR8100CP	DYELEC	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR8100CT	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR8100D	PANJIT	获取价格	D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
MBR8100DC	PANJIT	获取价格	D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER