Datasheet > MBR8150

MBR8150

更新时间： 2024-09-18 14:53:03

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1084K
描述
肖特基二极管

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技术参数
数据手册

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MBR8150 技术参数

Case Style：	TO-220AC	IF（A）：	8.0
Maximum recurrent peak reverse voltage：	150	Peak forward surge current：	150
Maximum instantaneous forward voltage：	0.95	@IF(A)：	8.0
Maximum reverse current：	0.2	TJ(℃）：	/
class：	Diodes

MBR8150 数据手册

MBR830-MBR8200

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 200 V

CURRENT: 8.0 A

TO-220AC

Features

High surge capacity.

4.5± 0.2

10.2± 0.2

1.4± 0.2

For use in low voltage, high frequency inverters, free

1wheeling, and polarity protection applications.

φ 3.8± 0.15

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

The plastic material carries U/L recognition 94V-0

2.6± 0.2

Mechanical Data

Case:JEDEC TO-220AC,molded plastic body

0.9± 0.1

Polarity: As marked

Position: Any

0.5± 0.1

5.0± 0.1

Weight: 0.064 ounces,1.81 gram

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Ratings at 25

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

MBR

8150

MBR MBR MBR MBR MBR MBR MBR MBR

MBR

8200

Symbol

Parameter

UNITS

830

835

840 845

850

860

880 8100

150

105

150

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

Maximum DC blocking voltage

100

Maximum average forw ard total device11111111

I_F(AV)

8.0

m rectified current @T_C= 125°C

Peak forw ard surge current 8.3ms single half

I_FSM

V_F

I_R

150

sine-w ave superimposed on rated load

Maximum forward voltage (Note 1)

0.8

0.85

0.7

0.95

)

_F=8.0A,T_C=25

Maximum reverse current

at rated DC blocking voltage

@T_C=25

0.1

m A

K/W

@T_C=125

Maximum thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

3.0

R_θJC

T_J

- 55 ---- + 150

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance f rom junction to case.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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