Datasheet > MBR8100CD

MBR8100CD

更新时间： 2024-09-18 01:17:51

品牌	Logo	应用领域
圣诺 - SENO		/
页数	文件大小	规格书
2页	148K
描述
8.0 A SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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MBR8100CD 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

MBR840CD-MBR8200CD

8.0 A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

TO-252/DPAK

Plastic Case Material has UL Flammability

Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O

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Mechanical Data

Case: TO-252/DPAK, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

840CD

MBR

845CD

MBR

Characteristic

Symbol

Units

850CD 860CD 880CD 8100CD 8150CD 8200CD

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

150

105

200

140

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75°C

(Note 1)

8. 0

100

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

FSM

0.80

280

0.85

0.92

Forward Voltage

@I_F= 4A

0.70

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.1

I^RM

350

200

°C/W

°C

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

R^ꢀ

T^j, T^STG

-55 to +150

-55 to +175

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

www.senocn.com

MBR840CD-MBR8200CD

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