5秒后页面跳转
MBR8100 PDF预览

MBR8100

更新时间: 2024-09-17 12:46:39
品牌 Logo 应用领域
科盛美 - KERSEMI 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 826K
描述
High Current Capability, Low VF

MBR8100 数据手册

 浏览型号MBR8100的Datasheet PDF文件第2页 
MBR870  
Thru  
MBR8100  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
High Current Capability, Low VF  
Low Power Loss, High Efficiency  
Guard Ring for Transient Protection  
Marking : type number  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
8 Amp  
Schottky Rectifier  
70-100 Volts  
RoHS Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
TO-220AC  
Maximum Ratings  
Operating Temperature: -55R to +150R  
B
L
Storage Temperature: -55R to +175R  
Maximum Thermal Resistance: RθJC = 2.0R/W junction to case  
M
C
D
Maximum  
Recurrent  
Maximum DC  
Blocking  
MCC  
Maximum  
A
K
Part Number Peak Reverse RMS Voltage  
Voltage  
Voltage  
PIN  
1
2
MBR870  
MBR880  
MBR890  
MBR8100  
70V  
80V  
90V  
49V  
56V  
63V  
70V  
70V  
80V  
90V  
F
G
100V  
100V  
I
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
Peak Forward  
Surge Current  
Voltage Rate of  
Change  
H
N
TC = 110R  
8.3ms, half sine  
Rated VR  
IF(AV)  
8A  
IFSM  
I
dv/dt  
125A  
10000  
PIN 1  
PIN 2  
CASE  
I
FM = 8A@ TJ = 25R  
IFM = 8A@ TJ = 125R  
FM = 16A@ TJ = 25R  
.85V  
.75V  
.95V  
.85V  
Maximum  
Instantaneous  
Forward Voltage  
VF  
ꢁꢂꢃꢉꢄꢊꢂꢇꢄꢊ  
I
ꢀ ꢀ ꢀ ꢀ  
IFM = 16A@ TJ = 125R  
INCHES  
ꢃꢂꢄ  
MM  
ꢁꢂꢃ  
A
B
C
D
F
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
2.54  
5.84  
------  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
6.86  
6.35  
ꢄꢇꢈꢉ  
Maximum DC  
Reverse Current  
At Rated DC  
.560  
.380  
.100  
.230  
------  
.625  
.420  
.135  
.270  
.250  
TJ = 25R  
100mA TJ = 125R  
0.15mA  
IR  
Blocking Voltage  
Typical Junction  
Capacitance  
G
H
I
J
K
.500  
.190  
.020  
.012  
.139  
.140  
.580  
.210  
.045  
.025  
.161  
.190  
12.70  
4.83  
0.51  
0.30  
3.53  
3.56  
14.73  
5.33  
1.14  
0.64  
4.09  
4.83  
Measured at 1.0MHz,  
VR=4.0V  
CJ  
280pF  
Notes:1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
L
M
N
.045  
.080  
.055  
.115  
1.14  
2.03  
1.40  
2.92  
www.kersemi.com  

与MBR8100相关器件

型号 品牌 获取价格 描述 数据表
MBR8100-B MCC

获取价格

Rectifier Diode,
MBR8100-BP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC,
MBR8100C MDD

获取价格

SCHOTTKY BARRIER RECTIFIER
MBR8100CD DYELEC

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR8100CD SENO

获取价格

8.0 A SCHOTTKY BARRIER DIODE
MBR8100CP SENO

获取价格

8.0 A SCHOTTKY BARRIER DIODE
MBR8100CP DYELEC

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR8100CT PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIER
MBR8100D PANJIT

获取价格

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
MBR8100DC PANJIT

获取价格

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER