New Product
MBR60100CT
Vishay General Semiconductor
Dual Common-Cathode High Voltage Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
TO-220AB
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
3
2
1
• Component in accordance to RoHS 2002/95/EC
PIN 1
PIN 3
PIN 2
CASE
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Case: TO-220AB
IF(AV)
30 A x 2
VRRM
100 V
350 A
0.64 V
175 °C
Epoxy meets UL 94V-0 flammability rating
IFSM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VF at IF = 30 A
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
VRRM
MBR60100CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
100
100
100
V
V
V
VRWM
VDC
total device
Maximum average forward rectified current
per diode
60
30
IF(AV)
IFSM
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
350
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.0 A, L = 40 mH
Voltage rate of change (rated VR)
IRRM
ERSM
EAS
1.0
25
A
mJ
mJ
V/µs
°C
20
dV/dt
10 000
- 65 to + 175
Operating junction and storage temperature range
TJ, TSTG
Document Number: 88892
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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