Datasheet > MBR60200PT

MBR60200PT

更新时间： 2023-12-06 20:11:33

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	756K
描述
Bulk : 360pcs/Box, 1.8K/Ctn;

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MBR60200PT 数据手册

MBR60200PT

Features

• Multilayer Metal -Silicon Potential Structure.

• Low Voltage High Frequency Inverter Application.

• Epoxy Meets UL 94 V-0 Flammability Rating

• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix Designates

Compliant. See Ordering Information)

60 Amp

Schottky Barrier

Rectifier

200 Volts

Maximum Ratings

• Operating Junction Temperature Range: -55⁰C to +150⁰C

• Storage Temperature Range: -55⁰C to +150⁰C

• Typical Thermal Resistance: 0.5⁰C/WJunction to Case

Maximum

Maximum DC

TO-247

Maximum

RMS

Voltage

MCC

Device

Recurrent

Peak Reverse

Voltage

Blocking

Voltage

Part Number

Marking

MBR60200PT MBR60200PT

200V

Electrical Characteristics @ 25°C Unless Otherwise Speciﬁed

Average Forward Current

60A(Per Device)

I_F(AV)

(Rated VR-20Khz Square

Wave)-50% Duty Cycle

30A(Per Diode)

Peak Forward Surge

Current

I_FSM

450A

8.3ms,Half Sine Wave

I_FM=30A;

0.83V(Typ)

0.90V(Max)

Maximum

Instantaneous

Forward Voltage

T_J=25⁰C

V_F

I_FM=30A;

0.80V(Max)

T_J=125⁰C

Maximum Reverse

Current at Rated

DC Blocking

0.02mA

10mA

T_J=25⁰C

I_R

T_J=125⁰C

Voltage

DIMENSIONS

INCHES MM

MIN MAX MIN MAX

Note:1. High Temperature Solder Exemptions Applied, See EU Directive Annex 7a.

DIM

NOTE

Internal Structure

0.787 0.866 20.00 22.00

0.598 0.638 15.20 16.20

0.185 0.208 4.70 5.30

0.035 0.059 0.90 1.50

0.059 0.094 1.50 2.40

0.067 0.091 1.70 2.30

0.019 0.031 0.48 0.80

0.748 0.833 19.00 21.15

0.122 0.189 3.10 4.80

0.118 0.150 3.00 3.80

0.106 0.134 2.70 3.40

0.197 0.224 5.00 5.70

PIN 1

PIN 3

PIN 2

CASE

Rev.3-2-12012020

1/3

MCCSEMI.COM

12 3

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