Datasheet > MBR60100CT_15

MBR60100CT_15

更新时间： 2024-11-02 01:25:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	82K
描述
Dual Common Cathode High Voltage Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR60100CT_15 数据手册

MBR60100CT

Vishay General Semiconductor

www.vishay.com

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES

• Power pack

TO-220AB

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 3

PIN 2

CASE

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, or

polarity protection application.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

V_RRM

2 x 30 A

100 V

Case: TO-220AB

Epoxy meets UL 94 V-0 flammability rating

I_FSM

350 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class 1A

V_Fat I_F= 30 A

T_Jmax.

Package

0.64 V

175 °C

TO-220AB

whisker test

Diode variations

Common cathode

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBR60100CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

100

V_RWM

V_DC

total device

per diode

Maximum average forward rectified current

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

I_RRM

E_RSM

350

Peak repetitive reverse current per diode at t_p= 2 μs, 1 kHz

Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)

Non-repetitive avalanche energy per diode at 25 °C, I_AS= 1.0 A, L = 40 mH

Voltage rate of change (rated V_R)

1.0

V/μs

°C

E_AS

dV/dt

T_J, T_STG

10 000

- 65 to + 175

Operating junction and storage temperature range

Revision: 13-Aug-13

Document Number: 88892

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与MBR60100CT_15相关器件

型号	品牌	获取价格	描述	数据表
MBR60100CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High Voltage Schottky Rectifier
MBR60100CTR	AMERICASEMI	获取价格	HIGH POWER -SCHOTTKY RECTIFIERS
MBR60100PT	PANJIT	获取价格	60 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBR60100PT	SIRECT	获取价格	Power Schottky Rectifier - 60Amp 100Volt
MBR60100PT	LGE	获取价格	Schottky Barrier Rectifiers
MBR60100PT	TSC	获取价格	60.0 AMPS. Schottky Barrier Rectifiers
MBR60100PT-G	COMCHIP	获取价格	Schottky Barrier Rectifier
MBR60100R	TRSYS	获取价格	SCHOTTKY DIODES STUD TYPE 60 A
MBR60100R	NAINA	获取价格	Schottky Power Diode, 60A
MBR60100R	GENESIC	获取价格	Silicon Power Schottky Diode