Datasheet > MBR60150PT

MBR60150PT

更新时间： 2024-02-17 22:02:50

品牌	Logo	应用领域
SIRECT		局域网功效瞄准线二极管
页数	文件大小	规格书
3页	126K
描述
High Tjm Low IRRM Schottky Barrier Diodes

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技术参数
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MBR60150PT 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.68
Is Samacsys：	N	Base Number Matches：	1

MBR60150PT 数据手册

E L E C T R O N I C

MBR60100PT

Power Schottky Rectifier - 60Amp 100Volt

□ Features

-Plastic package has Underwriters Laboratory Flammability Classifications

94V-0

-High Junction Temperature Capability

-Low forward voltage, high current capability

-High surge capacity

TO-3P

-Low power loss, high efficiency

-ESD performance human body mode > 8 KV

□ Application

-AC/DC Switching Adaptor and other Switching Power Supply

-SMPS

□ Absolute maximum ratings

Symbol

IF(AV)

Ratings

Unit

Conditions

Average Forward Current

Repetitive Peak Reverse

Voltage

100

VRRM

500

Peak Forward Surge Current

Forward Voltage Drop

Operating Temperature

Storage Temperature

IFSM

VF(max)

0.69

-50 to +175

-50 to +150

ºC

DIMENSIONS

Tstg

INCHES

DIM

NOTE

MIN

MAX

.783

.827

.386

.535

.628

.276

.085

.126

.551

.047

.220

.195

.035

.059

.065

.197

.140

.130

MIN

18.90 19.90

20.00 21.00

MAX

.744

.787

.346

.512

.602

.256

.077

.098

.528

.035

.205

.183

.022

.053

.055

.165

.128

.114

□ Electrical characteristics

8.80

9.80

13.00 13.60

15.30 15.95

Parameters

Maximum Instantaneous

Forward Voltage

Symbol

Ratings

0.85V

Conditions

Tc = 25ºC

Tc = 125ºC

Tc = 25ºC

Tc = 125ºC

6.50

1.95

2.50

7.00

2.15

3.20

0.69V

13.40 14.00

Maximum Reverse Leakage

Current

0.01mA

10mA

0.90

5.20

4.65

0.55

1.35

1.40

4.20

3.25

2.90

1.20

5.60

4.95

0.90

1.50

1.65

5.00

3.55

3.30

Maximum Voltage Rate of

Change

10,000 V/μs

1.1 ºC/W

dv/dt

Rθ (j-c)

Rated VR

Per diode

Typical Thermal Resistance,

Junction to Case

August 2008 / Rev.6.1

http:// www.sirectsemi.com

12 3

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