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MBR60060CT PDF预览

MBR60060CT

更新时间: 2024-01-06 07:18:07
品牌 Logo 应用领域
GENESIC 局域网二极管
页数 文件大小 规格书
3页 722K
描述
Silicon Power Schottky Diode

MBR60060CT 技术参数

生命周期:Contact Manufacturer包装说明:R-XUFM-X2
Reach Compliance Code:unknown风险等级:5.73
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JESD-30 代码:R-XUFM-X2最大非重复峰值正向电流:4000 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:300 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:60 V
最大反向电流:1000 µA表面贴装:NO
技术:SCHOTTKY端子形式:UNSPECIFIED
端子位置:UPPERBase Number Matches:1

MBR60060CT 数据手册

 浏览型号MBR60060CT的Datasheet PDF文件第2页浏览型号MBR60060CT的Datasheet PDF文件第3页 
MBR60045CT thru MBR600100CTR  
VRRM = 45 V - 100 V  
IF(AV) = 600 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 45 V to 100 V VRRM  
Twin Tower Package  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR60080CT(R) MBR600100CT(R)  
Parameter  
Symbol  
MBR60045CT(R) MBR60060CT(R)  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
80  
100  
45  
60  
V
VRMS  
VDC  
Tj  
57  
70  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
32  
42  
V
V
80  
100  
45  
60  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
MBR60080CT(R) MBR600100CT(R)  
Parameter  
Symbol  
MBR60045CT(R) MBR60060CT(R)  
Unit  
A
Average forward current  
(per pkg)  
TC = 125 °C  
IF(AV)  
600  
4000  
0.84  
600  
4000  
0.84  
600  
600  
Peak forward surge  
current (per leg)  
IF,SM tp = 8.3 ms, half sine  
4000  
4000  
A
Maximum forward  
voltage (per leg)  
VF  
IR  
IF = 300 A, Tj = 25 °C  
V
0.75  
0.80  
Tj = 25 °C  
Tj = 100 °C  
Tj = 150 °C  
1
1
1
1
Reverse current at rated  
DC blocking voltage  
(per leg)  
10  
50  
10  
50  
mA  
10  
50  
10  
50  
Thermal characteristics  
Thermal resistance,  
junction-case, per leg  
RΘJC  
0.28  
0.28  
0.28  
0.28  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbr60045ct.pdf  

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