Datasheet > MBR6010

MBR6010

更新时间： 2024-09-27 01:21:31

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描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBR6010 数据手册

MBR6045 thru MBR60100R

V_RRM= 45 V - 100 V

I_F= 60 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 45 V to 100 V V_RRM

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

Stud Stud

(R)

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBR6080 (R) MBR60100 (R)

Parameter

Symbol

MBR6045 (R) MBR6060 (R)

Unit

V_RRM

V_RMS

V_DC

I_F

100

Repetitive peak reverse voltage

RMS reverse voltage

100

DC blocking voltage

T_C≤ 100 °C

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

I_F,SM

T_C= 25 °C, t_p= 8.3 ms

700

T_j

-55 to 150

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

MBR6080 (R) MBR60100 (R)

Parameter

Symbol

MBR6045 (R) MBR6060(R)

Unit

V_F

I_R

I_F= 60 A, T_j= 25 °C

V_R= 20 V, T_j= 25 °C

V_R= 20 V, T_j= 125 °C

0.84

Diode forward voltage

Reverse current

0.65

0.75

150

Thermal characteristics

Thermal resistance, junction -

case

R_thJC

1.0

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/mbr6045.pdf

12 3

中文翻译

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