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MBR60020CTR PDF预览

MBR60020CTR

更新时间: 2024-11-06 02:55:19
品牌 Logo 应用领域
GENESIC 局域网二极管
页数 文件大小 规格书
3页 718K
描述
Silicon Power Schottky Diode

MBR60020CTR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PUFM-X2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
Is Samacsys:N应用:POWER
外壳连接:ANODE配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJESD-30 代码:R-PUFM-X2
最大非重复峰值正向电流:4000 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:300 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:20 V最大反向电流:1000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

MBR60020CTR 数据手册

 浏览型号MBR60020CTR的Datasheet PDF文件第2页浏览型号MBR60020CTR的Datasheet PDF文件第3页 
MBR60020CT thru MBR60040CTR  
VRRM = 20 V - 40 V  
IF(AV) = 600 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 20 V to 40 V VRRM  
Twin Tower Package  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR60035CT(R) MBR60040CT(R)  
Parameter  
Symbol  
MBR60020CT(R) MBR60030CT(R)  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
35  
40  
20  
30  
V
VRMS  
VDC  
Tj  
25  
28  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
14  
21  
V
V
35  
40  
20  
30  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
MBR60035CT(R) MBR60040CT(R)  
Parameter  
Symbol  
MBR60020CT(R) MBR60030CT(R)  
Unit  
A
Average forward current  
(per pkg)  
TC = 125 °C  
IF(AV)  
600  
600  
600  
600  
Peak forward surge  
current (per leg)  
IFSM tp = 8.3 ms, half sine  
4000  
4000  
4000  
4000  
A
Maximum forward  
voltage (per leg)  
VF IFM = 300 A, Tj = 25 °C  
Tj = 25 °C  
0.75  
0.75  
V
0.75  
0.75  
1
1
1
1
Reverse current at rated  
DC blocking voltage  
(per leg)  
IR  
Tj = 100 °C  
Tj = 150 °C  
10  
50  
10  
50  
mA  
10  
50  
10  
50  
Thermal characteristics  
Thermal resistance,  
junction-case, per leg  
RΘJC  
0.28  
0.28  
0.28  
0.28  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbr60020ct.pdf  

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