5秒后页面跳转
MBR60035CTR PDF预览

MBR60035CTR

更新时间: 2024-02-11 22:10:19
品牌 Logo 应用领域
GENESIC 局域网二极管
页数 文件大小 规格书
3页 718K
描述
Silicon Power Schottky Diode

MBR60035CTR 技术参数

生命周期:Contact Manufacturer包装说明:R-XUFM-X2
Reach Compliance Code:unknown风险等级:5.7
应用:GENERAL PURPOSE外壳连接:ANODE
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JESD-30 代码:R-XUFM-X2最大非重复峰值正向电流:4000 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:300 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:35 V
最大反向电流:1000 µA子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

MBR60035CTR 数据手册

 浏览型号MBR60035CTR的Datasheet PDF文件第2页浏览型号MBR60035CTR的Datasheet PDF文件第3页 
MBR60020CT thru MBR60040CTR  
VRRM = 20 V - 40 V  
IF(AV) = 600 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 20 V to 40 V VRRM  
Twin Tower Package  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR60035CT(R) MBR60040CT(R)  
Parameter  
Symbol  
MBR60020CT(R) MBR60030CT(R)  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
35  
40  
20  
30  
V
VRMS  
VDC  
Tj  
25  
28  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
14  
21  
V
V
35  
40  
20  
30  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
MBR60035CT(R) MBR60040CT(R)  
Parameter  
Symbol  
MBR60020CT(R) MBR60030CT(R)  
Unit  
A
Average forward current  
(per pkg)  
TC = 125 °C  
IF(AV)  
600  
600  
600  
600  
Peak forward surge  
current (per leg)  
IFSM tp = 8.3 ms, half sine  
4000  
4000  
4000  
4000  
A
Maximum forward  
voltage (per leg)  
VF IFM = 300 A, Tj = 25 °C  
Tj = 25 °C  
0.75  
0.75  
V
0.75  
0.75  
1
1
1
1
Reverse current at rated  
DC blocking voltage  
(per leg)  
IR  
Tj = 100 °C  
Tj = 150 °C  
10  
50  
10  
50  
mA  
10  
50  
10  
50  
Thermal characteristics  
Thermal resistance,  
junction-case, per leg  
RΘJC  
0.28  
0.28  
0.28  
0.28  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbr60020ct.pdf  

与MBR60035CTR相关器件

型号 品牌 获取价格 描述 数据表
MBR60040CT GENESIC

获取价格

Silicon Power Schottky Diode
MBR60040CT AMERICASEMI

获取价格

HIGH POWER -SCHOTTKY RECTIFIERS
MBR60040CT(R) TRSYS

获取价格

SCHOTTKY DIODES MODULE TYPE 600A
MBR60040CTL GENESIC

获取价格

High Surge Capability
MBR60040CTR TRSYS

获取价格

SCHOTTKY DIODES MODULE TYPE 600A
MBR60040CTR GENESIC

获取价格

High Surge Capability
MBR60040CTR AMERICASEMI

获取价格

HIGH POWER -SCHOTTKY RECTIFIERS
MBR60045CT GENESIC

获取价格

Silicon Power Schottky Diode
MBR60045CT AMERICASEMI

获取价格

HIGH POWER -SCHOTTKY RECTIFIERS
MBR60045CT(R) TRSYS

获取价格

SCHOTTKY DIODES MODULE TYPE 600A