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MBR30H100PT PDF预览

MBR30H100PT

更新时间： 2024-01-13 18:26:37
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 66K
描述
High-Voltage Dual Schottky Rectifiers

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MBR30H100PT 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.91
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.67 V
最大非重复峰值正向电流：265 A最高工作温度：175 °C
最大输出电流：15 A最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY

MBR30H100PT 数据手册

 浏览型号MBR30H100PT的Datasheet PDF文件第2页 
MBR30H90PT & MBR30H100PT  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
High-Voltage Dual Schottky Rectifiers  
Reverse Voltage 90 to 100V  
Forward Current 30A  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classifications 94V-0  
• Dual rectifier construction, positive center-tap  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency  
• High current capability, low forward voltage drop  
• High surge capability  
TO-247AD  
0.245 (6.2)  
0.225 (5.7)  
0.645 (16.4)  
0.625 (15.9)  
0.203 (5.16)  
0.193 (4.90)  
0.078 REF  
(1.98)  
0.323 (8.2)  
0.313 (7.9)  
10°  
30  
0.170  
(4.3)  
10  
TYP.  
BOTH SIDES  
0.840 (21.3)  
0.820 (20.8)  
0.142 (3.6)  
0.138 (3.5)  
• For use in low voltage, high frequency inverters,  
free-wheeling, and polarity protection applications  
• Guardring for overvoltage protection  
0.086 (2.18)  
0.076 (1.93)  
1
REF.  
2
3
1
BOTH  
SIDES  
Mechanical Data  
0.118 (3.0)  
0.108 (2.7)  
0.127 (3.22)  
0.117 (2.97)  
Case: JEDEC TO-247AD molded plastic body  
0.160 (4.1)  
0.140 (3.5)  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
High temperature soldering guaranteed:  
250°C/10 seconds, 0.17” (4.3mm) from case  
Dimensions  
in inches and  
(millimeters)  
0.795 (20.2)  
0.775 (19.6)  
PIN 2  
CASE  
PIN 1  
PIN 3  
Polarity: As marked  
0.225 (5.7)  
0.205 (5.2)  
0.030 (0.76)  
0.020 (0.51)  
0.048 (1.22)  
0.044 (1.12)  
Mounting Position: Any Mounting Torque: 10 in-lbs max.  
Weight: 0.2 oz., 5.6 g  
Maximum Ratings & Thermal Characteristics Ratings per leg at TA = 25°C unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRWM  
VDC  
MBR30H90PT MBR30H100PT  
Unit  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
90  
90  
90  
100  
100  
100  
V
V
V
Total device  
Per leg  
30  
15  
Maximum average forward rectified current  
IF(AV)  
A
Peak repetitive forward current per leg at TC=105°C  
(rated VR, square wave, 20 KHZ)  
IFRM  
IFSM  
30  
A
A
Peak forward surge current, 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
265  
Peak repetitive reverse surge current at tp = 2µs, f = 1kHz  
Non-repetitive avalanche energy (IAS = 0.5A, L = 60mH)  
Voltage rate of change at (rated VR)  
IRRM  
EAS  
dv/dt  
RθJC  
TJ  
1.0  
7.5  
A
mJ  
10,000  
1.6  
V/µs  
°C/W  
°C  
Thermal resistance from junction to case per leg  
Operating junction and storage temperature range  
–65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
MBR30H90PT MBR30H100PT  
Unit  
Maximum instantaneous  
IF = 15A, TJ = 25°C  
IF = 15A, TJ = 125°C  
IF = 30A, TJ = 25°C  
IF = 30A, TJ = 125°C  
0.82  
0.67  
0.93  
0.80  
forward voltage per leg at: (1)  
VF  
V
Maximum instantaneous reverse current at  
rated DC blocking voltage per leg (1)  
TJ = 25°C  
TJ = 125°C  
5.0  
6.0  
µA  
mA  
IR  
Note: (1) Pulse test: 300µs pulse width, 1% duty cycle  
Document Number 88678  
02-Jul-02  
www.vishay.com  
1
12

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