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MBR30H150CT_T0_10001 PDF预览

MBR30H150CT_T0_10001

更新时间: 2024-11-13 01:03:11
品牌 Logo 应用领域
强茂 - PANJIT 局域网功效瞄准线二极管
页数 文件大小 规格书
6页 280K
描述
ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS

MBR30H150CT_T0_10001 技术参数

生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67其他特性:LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:275 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:150 V最大反向电流:0.8 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBR30H150CT_T0_10001 数据手册

 浏览型号MBR30H150CT_T0_10001的Datasheet PDF文件第2页浏览型号MBR30H150CT_T0_10001的Datasheet PDF文件第3页浏览型号MBR30H150CT_T0_10001的Datasheet PDF文件第4页浏览型号MBR30H150CT_T0_10001的Datasheet PDF文件第5页浏览型号MBR30H150CT_T0_10001的Datasheet PDF文件第6页 
PMBR30H150CT \ MBR30H150FCT \ MBR30H150DC SERIES  
ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS  
150 V  
30 A  
Voltage  
Current  
TO-220AB  
ITO-220AB  
TO-263  
Features  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
Flame Retardant Epoxy Molding Compound.  
Low power loss, high efficiency.  
High current capability  
High junction temperature capability  
Lead free in compliance with EU RoHS 2011/65/EU directive  
Mechanical Data  
Case: TO-220AB, ITO-220AB, TO-263 package  
Terminals: solder plated, solderable per MIL-STD-750,Method 2026  
TO-220AB Weight: 0.067 ounces, 1.89 grams.  
ITO-220AB Weight: 0.056 ounces, 1.6 grams.  
TO-263 Weight: 0.051 ounces, 1.46 grams.  
Marking: Part number  
150V  
TO-220AB  
TO-263  
MBR30H150CT  
MBR30H150DC  
MBR30H150FCT  
ITO-220AB  
Maximum Ratings And Electrical Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Maximum repetitive peak reverse voltage  
Maximum rms voltage  
SYMBOL  
VRRM  
VRMS  
UNIT  
150V  
150  
105  
150  
30  
V
V
V
Maximum dc blocking voltage  
VR  
Maximum average forward rectified per device  
IF(AV)  
A
A
current  
per diode  
15  
Peak forward surge current : 8.3ms single half sine-  
wave superimposed on rated load per diode  
IFSM  
VF  
275  
Maximum forward voltage at 15A per diode  
0.85  
V
Maximum dc reverse current  
at rated dc blocking voltage  
TJ =25 oC  
TJ =125 oC  
0.8  
A  
mA  
IR  
1
TO-220AB(Note 1)  
TO-263(Note 1)  
ITO-220AB(Note 1)  
3
Typical thermal resistance  
RJC  
3
oC/W  
7
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +175  
-55 to +175  
oC  
oC  
TSTG  
Note : 1. Device mounted on a infinite heatsink , then measured the center of the marking side.  
February 3,2015-REV.00  
Page 1  

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