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MBR30H100PT-E3/45

更新时间： 2024-01-11 01:58:16
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 89K
描述
DIODE 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN, Rectifier Diode

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MBR30H100PT-E3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-247AD
包装说明：R-PSFM-T3针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.35
其他特性：FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.67 VJEDEC-95代码：TO-247AD
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：265 A
元件数量：2相数：1
端子数量：3最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：245
认证状态：Not Qualified最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBR30H100PT-E3/45 数据手册

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MBR30H90PT, MBR30H100PT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode High Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
3
• High frequency operation  
2
1
• Solder dip 275 °C max., 10 s, per JESD 22-B106  
TO-247AD (TO-3P)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 15 A  
90 V, 100 V  
265 A  
Case: TO-247AD (TO-3P)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
0.67 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
IR  
5.0 μA  
TJ max.  
175 °C  
Package  
TO-247AD (TO-3P)  
Common cathode  
Polarity: As marked  
Diode variations  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBR30H90PT  
MBR30H100PT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
total device  
per diode  
30  
15  
Maximum average forward rectified current  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
IRRM  
EAS  
265  
1.0  
7.5  
A
A
Peak repetitive reverse surge current at tp = 2 μs, 1 kHz  
per diode  
Non-repetitve avalanche energy (IAS = 0.5 A, L = 60 mH)  
per diode  
mJ  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Revision: 15-Aug-15  
Document Number: 88678  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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