MBR30H90PT & MBR30H100PT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
3
• High forward surge capability
2
1
• High frequency operation
TO-247AD (TO-3P)
PIN 2
• Solder dip 260 °C, 40 s
PIN 1
PIN 3
CASE
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
15 A x 2
90 V, 100 V
265 A
MECHANICAL DATA
Case: TO-247AD (TO-3P)
0.67 V
Epoxy meets UL 94V-0 flammability rating
IR
5.0 µA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
TJ max.
175 °C
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
MBR30H90PT
MBR30H100PT
UNIT
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
90
90
90
100
100
100
V
V
V
total device
per diode
30
15
Maximum average forward rectified current
IF(AV)
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
IRRM
EAS
265
1.0
7.5
A
A
Peak repetitive reverse surge current at tp = 2 µs, f = 1 kHz
per diode
Non-repetitive avalanche energy (IAS = 0.5 A, L = 60 mH)
per diode
mJ
Voltage rate of change at (rated VR)
dV/dt
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
Document Number: 88678
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1