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MBR30H100PT-E3/450 PDF预览

MBR30H100PT-E3/450

更新时间: 2022-11-18 15:52:26
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
4页 325K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

MBR30H100PT-E3/450 数据手册

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MBR30H90PT & MBR30H100PT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
3
• High forward surge capability  
2
1
• High frequency operation  
TO-247AD (TO-3P)  
PIN 2  
• Solder dip 260 °C, 40 s  
PIN 1  
PIN 3  
CASE  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
15 A x 2  
90 V, 100 V  
265 A  
MECHANICAL DATA  
Case: TO-247AD (TO-3P)  
0.67 V  
Epoxy meets UL 94V-0 flammability rating  
IR  
5.0 µA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
175 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MBR30H90PT  
MBR30H100PT  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
total device  
per diode  
30  
15  
Maximum average forward rectified current  
IF(AV)  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
IRRM  
EAS  
265  
1.0  
7.5  
A
A
Peak repetitive reverse surge current at tp = 2 µs, f = 1 kHz  
per diode  
Non-repetitive avalanche energy (IAS = 0.5 A, L = 60 mH)  
per diode  
mJ  
Voltage rate of change at (rated VR)  
dV/dt  
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88678  
Revision: 25-Mar-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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