Datasheet > MBR30H100C

MBR30H100C

更新时间： 2024-11-12 11:11:51

品牌	Logo	应用领域
BCDSEMI		高压高电压电源
页数	文件大小	规格书
11页	650K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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MBR30H100C 数据手册

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MBR30H100C

General Description

Main Product Characteristics

I_F(AV)

V_RRM

T_J

2*15A

100V

High voltage dual Schottky rectifier suited for switch

mode power supplies and other power converters. This

device is intended for use in medium voltage opera-

tion, and particularly, in high frequency circuits where

low switching losses and low noise are required.

175^oC

0.67V

V_F(max)

MBR30H100C is available in TO-220-3, TO-220-3(2)

and TO-220F-3 packages

Mechanical Characteristics

Case: Epoxy, Molded

Epoxy Meets UL 94 V-0 @ 0.125 in

Weight (Approximately):

2 Grams (TO-220-3, TO-220-3(2) and

TO-220F-3)

Finish: All External Surfaces Corrosion Resistant

and Terminal

Features

Low Forward Voltage: 0.67V @125^oC

High Surge Capacity

175^oC Operating Junction Temperature

30 A Total (15A Each Diode Leg)

Guard-Ring for Stress Protection

Pb-Free Package

Leads are Readily Solderable

Lead Temperature for Soldering Purposes:

260 C Maximumfor 10 Seconds

Applications

Power Supply Output Rectification

Power Management

Instrumentation

TO-220F-3

TO-220-3

TO-220-3(2)

Figure 1. Package Type of MBR30H100C

Apr. 2009 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

12 3 4 5 6 7...11

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