Datasheet > MBR30H100CT-E1

MBR30H100CT-E1

更新时间： 2022-04-16 17:26:05

品牌	Logo	应用领域
BCDSEMI		高压高电压电源
页数	文件大小	规格书
11页	939K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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MBR30H100CT-E1 数据手册

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MBR30H100C

General Description

Main Product Characteristics

High voltage dual Schottky rectifier suited for switch

mode power supplies and other power converters. This

device is intended for use in medium voltage opera-

tion, and particularly, in high frequency circuits where

low switching losses and low noise are required.

I_{F (AV)}

V_RRM

T_J

2×15A

100V

175^oC

0.67V

V_F(max)

MBR30H100C is available in TO-220-3, TO-220-3 (2)

and TO-220F-3 packages.

Mechanical Characteristics

Features

Case: Epoxy, Molded

Low Forward Voltage: 0.67V @ 125 C

Epoxy Meets UL 94V-0 @ 0.125in.

Weight (Approximately):

2Grams (TO-220-3, TO-220-3 (2) and

TO-220F-3)

Finish: All External Surfaces Corrosion Resistant

and Terminal

High Surge Capacity

175 C Operating Junction Temperature

30A Total (15A Each Diode Leg)

Guard-ring for Stress Protection

Pb-free Package

Leads are Readily Solderable

Lead Temperature for Soldering Purposes:

Applications

260 C Maximum for 10 Seconds

Power Supply Output Rectification

Power Management

Instrumentation

TO-220F-3

TO-220-3 (Optional)

TO-220-3 (2)

Figure 1. Package Types of MBR30H100C

Mar. 2011 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

12 3 4 5 6 7...11

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