Datasheet > MBR30H100CT_14

MBR30H100CT_14

更新时间： 2022-02-26 11:56:53

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	213K
描述
Dual Common Cathode Schottky Rectifier

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MBR30H100CT_14 数据手册

MBR30H100CT

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

TO-220AB

Case: TO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Mounting torque: 5 in-lbs maximum

Weight: 1.9 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

MBR30H100CT

SYMBOL

V_RRM

UNIT

100

Maximum RMS voltage

V_RMS

Maximum DC blocking voltage

Maximum average forward rectified current

V_DC

100

I_F(AV)

Peak repetitive forward current

(Rated VR, square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

150

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25℃

0.85

0.75

0.98

0.85

I_F=15A, T_J=125℃

V_F

I_F=30A, T_J=25℃

I_F=30A, T_J=125℃

Maximum reverse current @ rated VR

T_J=25 ℃

I_R

μA

T_J=125 ℃

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

dV/dt

R_θJC

T_J

V/μs

^OC/W

^OC

Operating junction temperature range

Storage temperature range

- 55 to +175

^OC

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1308032

Version: I13

12 3 4

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