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MBR3045ST

更新时间： 2024-11-02 00:00:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 开关
页数 文件大小 规格书
2页 55K
描述
SWITCHMODE⑩ Power Rectifier

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中文翻译

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MBR3045ST 技术参数

生命周期：Transferred包装说明：R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.27
应用：POWER外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.76 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大重复峰值反向电压：45 V最大反向电流：200 µA
表面贴装：NO技术：SCHOTTKY
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLEBase Number Matches：1

MBR3045ST 数据手册

 浏览型号MBR3045ST的Datasheet PDF文件第2页 
Order this document  
by MBR3045ST/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
. . . using the Schottky Barrier principle with a platinum barrier metal. This  
state–of–the–art device has the following features:  
•
Dual Diode Construction — Terminals 1 and 3 May Be  
Connected for Parallel Operation at Full Rating  
45 V Blocking Voltage  
SCHOTTKY BARRIER  
RECTIFIER  
•
•
•
•
•
30 AMPERES  
45 VOLTS  
Low Forward Voltage Drop  
Guardring for Stress Protection  
150°C Operating Junction Temperature  
Guaranteed Reverse Avalanche  
4
Mechanical Characteristics  
•
•
•
Case: Epoxy, Molded  
Weight: 1.9 grams (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead Temperature for Soldering Purposes: 260°C Max. for 10  
4
2
3
1
1
2
3
•
Seconds  
•
•
Shipped 50 Units Per Plastic Tube  
Marking: B3045  
CASE 221A–06, STYLE 6  
(TO–220AB)  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
45  
Volts  
RRM  
RWM  
R
V
Average Rectified Current  
Per Device  
Per Diode  
I
30  
15  
Amps  
F(AV)  
T
C
= 130°C  
Peak Repetitive Forward Current, Per Diode (Square Wave, V = 45 V, 20 kHz)  
R
I
30  
Amps  
Amps  
FRM  
Non Repetitive Peak Surge Current  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
I
150  
FSM  
Peak Repetitive Reverse Current, Per Diode (2.0 µs, 1.0 kHz)  
Operating Junction Temperature  
I
2.0  
–65 to +150  
–65 to +175  
175  
Amps  
°C  
RRM  
T
J
Storage Temperature  
T
stg  
°C  
Peak Surge Junction Temperature (Forward Current Applied)  
T
°C  
J(pk)  
Voltage Rate of Change (Rated V )  
R
dV/dt  
10000  
V/µs  
THERMAL CHARACTERISTICS PER DIODE  
Thermal Resistance, Junction to Case  
R
1.5  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS PER DIODE  
Instantaneous Forward Voltage (1)  
Instantaneous Reverse Current (1)  
(I = 30 Amp, T = 25°C)  
V
0.76  
0.72  
0.60  
Volts  
F
C
F
(I = 30 Amp, T = 125°C)  
F
F
C
C
(I = 20 Amp, T = 125°C)  
(V = 45 Volts, T = 25°C)  
I
R
0.2  
40  
mA  
R
R
C
C
(V = 45 Volts, T = 125°C)  
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%  
SWITCHMODE is a trademark of Motorola Inc.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Rev 1  
Motorola, Inc. 1996  
12

中文翻译

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