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MBR3045WT-N3

更新时间： 2024-11-24 11:11:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 161K
描述
Schottky Rectifier, 2 x 15 A

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MBR3045WT-N3 数据手册

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VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
• 150 °C TJ operation  
cathode  
2
• Very low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long  
term reliability  
1
3
TO-247AC  
Anode  
Anode  
2
2
1
• Compliant to RoHS Directive 2002/95/EC  
Common  
cathode  
• Designed and qualified according to JEDEC-JESD47  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 15 A  
IF(AV)  
DESCRIPTION  
VR  
35 V, 45 V  
The VS-MBR30..WT... center tap Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for  
reliable operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
VF at IF  
See Electrical table  
100 mA at 125 °C  
150 °C  
I
RM max.  
TJ max.  
Diode variation  
EAS  
Common cathode  
See Electrical table  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform (per device)  
A
TC = 125 °C (per leg)  
30  
35/45  
1020  
V
A
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
VF  
0.60  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL VS-MBR3035WTPbF VS-MBR3035WT-N3 VS-MBR3045WTPbF VS-MBR3045WT-N3 UNITS  
Maximum DC reverse  
voltage  
VR  
35  
35  
45  
45  
V
Maximumworkingpeak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 125 °C, rated VR  
VALUES  
UNITS  
per leg  
15  
30  
30  
Maximum average  
forward current  
IF(AV)  
per device  
Peak repetitive forward current per leg  
IFRM  
Rated VR, square wave, 20 kHz TC = 125 °C  
Following any rated load  
condition and with rated  
RRM applied  
A
5 µs sine or 3 µs rect. pulse  
1020  
V
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions half wave,  
single phase, 60 Hz  
200  
2.0  
Peak repetitive reverse surge current  
IRRM  
2.0 µs 1.0 kHz  
Revision: 30-Aug-11  
Document Number: 94293  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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