Datasheet > MBR3050CTR

MBR3050CTR

更新时间： 2024-11-28 00:56:39

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	308K
描述
30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers

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中文翻译

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MBR3050CTR 数据手册

MBR3035CTR thru MBR30200CTR

Pb Free Plating Product

30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers

Unit : inch (mm)

TO-220AB

Features

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

ꢀ

Standard MBR matured technology with high reliablity

Low forward voltage drop

.139(3.55)

MIN

.054(1.39)

.045(1.15)

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

.1(2.54)

ꢀ

Case: Heatsink TO-220AB open type

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

Polarity: As marked on diode body

Mounting position: Any

method 208

Case

Doubler

Series

Negative

Positive

Weight: 2.0 gram approximately

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Suffix "CT"

Suffix "CTR"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR MBR MBR MBR MBR MBR MBR MBR

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT

CTR

100

CTR

150

105

150

CTR

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

I_RRM

200

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25℃

0.70

0.75

0.84

0.95

I_F=15A, T_J=125℃

V_F

0.60

0.82

0.73

0.65

0.90

0.78

0.70

0.94

0.82

0.80

1.05

0.92

I_F=30A, T_J=25℃

I_F=30A, T_J=125℃

0.2

Maximum reverse current @ rated VR T_J=25 ℃

I_R

T_J=125 ℃

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

1.5

dV/dt

R_θJC

T_J

V/μs

℃

Operating junction temperature range

Storage temperature range

- 55 to +150

℃

T_STG

℃

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Rev.07C

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与MBR3050CTR相关器件

型号	品牌	获取价格	描述	数据表
MBR3050F	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers
MBR3050FCT	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3050FCT	CTC	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3050FCTE3/TU	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220
MBR3050LCT	RECTRON	获取价格	Reverse Voltage Vr : 50 V;Forward Current Io : 30 A;Max Surge Current : 250 A;Forward Volt
MBR3050PT	BL Galaxy Electrical	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR3050PT	FAIRCHILD	获取价格	30 Ampere Schottky Barrier Rectifiers
MBR3050PT	DIODES	获取价格	30A SCHOTTKY BARRIER RECTIFIER
MBR3050PT	VISHAY	获取价格	SCHOTTKY RECTIFIER
MBR3050PT	LGE	获取价格	Schottky Barrier Rectifiers

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