Datasheet > MBR3050CT

MBR3050CT

更新时间： 2024-09-23 12:29:47

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	372K
描述
30.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 30.0 Amperes

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中文翻译

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数据手册

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MBR3050CT 数据手册

MBR3035CT THRU MBR30100CT

星合子

XINGHE ELECTRONICS

30.0 AMPS. Schottky Barrier Rectifiers

Voltage Range

35 to 100 Volts

30.0 Amperes

Current

TO-220

Features

ꢀ

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

ꢀ

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

ꢀ

High temperature soldering guaranteed:

260^oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

ꢀ

Cases: JEDEC TO-220 molded plastic

Terminals: Leads solderable per MIL-STD-750, Method 2026

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR MBR MBR MBR MBR MBR

Symbol

Type Number

Units

3035

3045

3050

3060

3090 30100

100

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current at

I_(AV)

I_FRM

T_C=130^oC

Peak Repetitive Forward Current (Rated V_R, Square

Wave, 20KHz) at Tc=130^oC

30.0

250

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

I_FSM

I_RRM

Peak Repetitive Reverse Surge Current (Note 1)

Maximum Instantaneous Forward Voltage at (Note 2)

I_F=15A, Tc=25^OC

1.0

0.5

0.7

0.6

0.82

0.73

0.75

0.65

0.84

0.70

0.94

0.82

I_F=15A, Tc=125^OC

V_F

I_F=30A, Tc=25^OC

I_F=30A, Tc=125^OC

Maximum Instantaneous Reverse Current

@ Tc=25℃ at Rated DC Blocking Voltage Per Leg

@ Tc=125℃ (Note 2)

0.2

I_R

Voltage Rate of Change, (Rated V_R)

dV/dt

1,000

V/uS

Rθ_JC

℃/W

Maximum Thermal Resistance Per Leg (Note 3)

1.0

1.5

T_J

600

460

320

℃

Typical Junction Capacitance

Operating Junction Temperature Range

Storage Temperature Range

-65 to +150

-65 to +175

TSTG

Notes: 1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM

TEL:0536-2210359

QQ:464768017

中文翻译

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与MBR3050CT相关器件

型号	品牌	获取价格	描述	数据表
MBR3050CT??	MDD	获取价格	TO-220AB
MBR3050CT-B	MCC	获取价格	Rectifier Diode,
MBR3050CT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ROHS CO
MBR3050CT-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB,
MBR3050CTR	THINKISEMI	获取价格	30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers
MBR3050F	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers
MBR3050FCT	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3050FCT	CTC	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR3050FCTE3/TU	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220
MBR3050LCT	RECTRON	获取价格	Reverse Voltage Vr : 50 V;Forward Current Io : 30 A;Max Surge Current : 250 A;Forward Volt

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