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MBR3050PT PDF预览

MBR3050PT

更新时间: 2024-11-24 04:41:07
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 312K
描述
SCHOTTKY BARRIER RECTIFIER

MBR3050PT 数据手册

 浏览型号MBR3050PT的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
MBR3030PT - - - MBR30100PT  
BL  
VOLTAGE RANGE: 30 - 100 V  
CURRENT: 30 A  
SCHOTTKY BARRIER RECTIFIER  
FEATURES  
TO-3P(TO-247AD)  
High surge capacity.  
For use in low voltage, high frequency inverters, free  
111wheeling, and polarity protection applications.  
4.85  
5.15  
15.45  
15.75  
Metal silicon junction, majority carrier conduction.  
High current capacity, low forward voltage drop.  
Guard ring for over voltage protection.  
19.85  
20.15  
MECHANICAL DATA  
Case:JEDEC TO-3P,molded plastic body  
Terminals:Leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: As marked  
Position: Any  
3.70  
4.30  
2.00  
3.00  
2.20  
2.60  
2.00  
2.40  
14.20  
14.80  
3.00  
3.40  
1 1  
0.40  
0.80  
1.00  
1.40  
2.00  
3.00  
10.90  
A1  
A2  
A1  
A2  
K
K
Weight: 0.223 ounce, 6.3 grams  
mm  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.  
Ratings at 25  
MBR MBR  
MBR MBR MBR MBR MBR MBR  
UNITS  
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
30  
21  
30  
35  
25  
35  
40  
28  
40  
45  
32  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forw ard total device  
IF(AV)  
IFSM  
30  
A
A
m rectified current @TC = 105°C  
Peak forw ard surge current 8.3ms single half  
200  
b
sine-w ave superimposed on rated load  
Maximum forward  
voltage  
(IF=15A,TC=25  
(IF=15A,TC=125  
(IF=30A,TC=25  
)
-
0.80  
0.85  
)
0.57  
0.84  
0.70  
0.95  
0.65  
0.95  
V
VF  
)
(Note 1)  
(IF=30A,TC=125  
0.72  
0.85  
0.75  
)
Maximum reverse current  
at rated DC blocking voltage  
@TC=25  
1.0  
60  
0.2  
IR  
m A  
@TC=125  
40  
Maximum thermal resistance (Note2)  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
6.8  
4.4  
/W  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
www.galaxycn.com  
2. Thermal resistance from junction to case.  
Document Number 0267041  
1.  
BLGALAXY ELECTRICAL  

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